<scp>MBE</scp>of<scp>III</scp>‐<scp>Nitride</scp>Heterostructures for Optoelectronic Devices

Skierbiszewski, C.; Muzioł, G.; Turski, Henryk; Siekacz, M.; Nowakowski-Szkudlarek, Krzesimir; Feduniewicz-Żmuda, Anna; Wolny, P.; Sawicka, Marta

doi:10.1002/9781119354987.ch12

Cited by 1 publication

(1 citation statement)

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“…However, a controlled overlap between Mg and Si dopants reported in the work may affect the reproducibility of the device performance. MOCVDgrown TJs [3,13,14] exhibit higher voltage penalty compared to structures grown by PAMBE [24,25], either as all-MBE or hybrid MBE/MOCVD structures [26][27][28], partly because MBE growth of p-GaN does not suffer from the Mg memory effect. Previous state-of-the-art results on MOCVD TJs [29][30][31] employed InGaN interlayers with relatively high indium (In) mole fractions to achieve low TJ voltage penalty (< 0.1 V at 25 A/cm2).…”

Section: One Of the Major Challenges For Achieving Low-resistivitymentioning

confidence: 99%

All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions

Hasan¹,

Eddine²,

Chandrasekar³

et al. 2021

J. Phys. D: Appl. Phys.

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We carefully investigate three important effects including postgrowth activation annealing, delta (δ) dose and magnesium (Mg) buildup delay as well as experimentally demonstrate their influence on the electrical properties of GaN homojunction p–n diodes with a tunnel junction (TJ). The diodes were monolithically grown by metalorganic chemical vapor deposition (MOCVD) in a single growth step. By optimizing the annealing parameters for Mg activation, δ-dose for both donors and acceptors at TJ interfaces, and p +-GaN layer thickness, a significant improvement in tunneling properties is achieved. For the TJs embedded within the continuously-grown, all-MOCVD GaN diode structures, ultra-low voltage penalties of 158 mV and 490 mV are obtained at current densities of 20 A cm−2 and 100 A cm−2, respectively. The diodes with the engineered TJs show a record-low differential resistivity of 1.6 × 10−4 Ω cm2 at 5 kA cm−2.

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