InGaN-light emitting diode with high density truncated hexagonal pyramid shaped p-GaN hillocks on the emission surface

Park, Eun-Hyun; Ferguson, Ian T.; Jeon, Soo-Kun; Park, Joong-Seo; Yoo, Tae‐Kyung

doi:10.1063/1.2410229

Cited by 25 publications

(11 citation statements)

References 11 publications

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“…Electron or hole blocking layers in multi-quantum wells (MQWs) can confine one type of carriers and enhance the electron-hole recombination, and thus increase IQE. 27,28 The first generation of III-Nitrides LEDs are grown on sapphire substrates and the carriers have strong polarization effects in the quantum well structure. IQE of these polar LEDs achieve over 80% at low current densities, although experience "efficiency droop" at higher drive currents, 30 shown in Figure 2a.…”

Section: The Iii-nitrides For Light-emitting Diodesmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

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III-Nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on III-Nitrides revolutionize the solid-state lighting industry. III-Nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the III-Nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-Nitrides' magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated. The III-Nitrides, typically composed of GaN and its alloys with Al and In, are compound semiconductor materials with superior properties and well developed growth techniques 1 that has enabled their use in a board range of applications. The III-Nitrides have a hexagonal wurtzite structure and a continuous alloy system with tunable direct bandgaps from 6.2 eV (AlN) through 3.4 eV (GaN) to 0.7 eV (InN) 2 ( Figure 1). This wide coverage of direct bandgap range from deepultraviolet (UV) to infrared region promises a variety of applications in optoelectronics, such as light-emitting diodes (LEDs), lasers, photodetectors and solar cells. GaN is recognized with high breakdown field, high thermal conductivity, and high electron mobility, making GaN an excellent candidate for high power and RF electronic devices. III-Nitrides exhibit high Seebeck coefficient and excellent temperature stability for high temperature thermoelectric applications. Doped GaN exhibit other unique properties with associated applications; such as transition and rare-earth metals doped GaN with magnetic properties, and indium (In)/gadolinium (Gd)/boron (B)/and lithium (Li) doped GaN for nuclear detection. The ability to access such a wide spectral region and these numerous applications has traditionally required the use of many different III-V materials and complex device structures before the advent of the III-Nitrides. [3][4][5][6][7][8][9] This paper will review various applications of III-Nitrides in including LEDs, solar cells, power and RF electronics, magnetic properties, thermoelectrics and nuclear detection applications, along with their development history, current state of art and future explorations. The III-Nitrides for Light-Emitting DiodesLight-Emitting Diodes are a type of solid state lighting (SSL) source with compact size, high energy efficiency and long lifetime. High brightness LEDs have various application in traffic lights, automobile brake ligh...

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Section: The Iii-nitrides For Light-emitting Diodesmentioning

confidence: 99%

Review—The Current and Emerging Applications of the III-Nitrides

Zhou

Ghods

Saravade

et al. 2017

ECS J. Solid State Sci. Technol.

Self Cite

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“…Another area that has seen considerable attention over the last few years is to increase light extraction efficiency, which can be improved at the wafer level or at the chip level. Techniques like roughening of the upper p-GaN layer [13], forming photonic crystals on the top layer of the LEDs [14,15] and patterning of substrates [16] have successfully been applied in improving the external quantum efficiency of LEDs.…”

Section: Introductionmentioning

confidence: 99%

Void shape control in GaN re-grown on hexagonally patterned mask-less GaN

Ali¹,

Романов²,

Suihkonen³

et al. 2011

Journal of Crystal Growth

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“…Thus, one of the challenges in developing high brightness, high efficiency GaN-based LED is how to extract more photons that are otherwise trapped inside the chip or absorbed by the substrate. Several methods have recently been made to improve the light extraction efficiency such as micro-LED using inductively coupled plasma ICP, photonic crystal, roughening of the top LED surface, and patterned substrate [2][3][4][5]. Recently, we reported another technique to eliminate the effect of laterally guided light and to improve the extraction efficiency of the GaN-based LED via the use of embedded facet deflectors [6].…”

Section: Introductionmentioning

confidence: 99%

InGaN/GaN light emitting diode with R‐plane polygonal facet deflectors

Kim

Cường

Kim

et al. 2008

Phys. Status Solidi (c)

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The optical characteristics of periodic deflector embedded light emitting diode (PDE‐LED) with the artificial inverted polygonal pyramids (AIPPs) were studied in terms of focusing on the ratio between the flat active area and the AIPPs‐occupied area. Our result indicated that the AIPPs‐occupied area should be optimized equal to 25% for achieving the maximum of optical output efficiency from our PDE‐LED structure. Herein, the AIPPs were formed on SiO2 patterned by selective MOCVD growth technique. AIPPs including six {1‐102} R‐plane polygonal facets of 57° against {0001} c‐axis played an important role in promoting multiple chances to escape the photons and the redirected photons deflected through polygonal facets. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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InGaN-light emitting diode with high density truncated hexagonal pyramid shaped p-GaN hillocks on the emission surface

Cited by 25 publications

References 11 publications

Review—The Current and Emerging Applications of the III-Nitrides

Review—The Current and Emerging Applications of the III-Nitrides

Void shape control in GaN re-grown on hexagonally patterned mask-less GaN

InGaN/GaN light emitting diode with R‐plane polygonal facet deflectors

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