InGaN/GaN light emitting diode with R‐plane polygonal facet deflectors

Abstract

The optical characteristics of periodic deflector embedded light emitting diode (PDE‐LED) with the artificial inverted polygonal pyramids (AIPPs) were studied in terms of focusing on the ratio between the flat active area and the AIPPs‐occupied area. Our result indicated that the AIPPs‐occupied area should be optimized equal to 25% for achieving the maximum of optical output efficiency from our PDE‐LED structure. Herein, the AIPPs were formed on SiO2 patterned by selective MOCVD growth technique. AIPPs including six {1‐102} R‐plane polygonal facets of 57° against {0001} c‐axis played an important role in promoting multiple chances to escape the photons and the redirected photons deflected through polygonal facets. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)