InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

Krishnamoorthy, Sriram; Akyol, Fatih; Rajan, Siddharth

doi:10.1063/1.4897342

Cited by 66 publications

(53 citation statements)

References 30 publications

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“…Our TJ design allowed us to achieve a differential resistivity lower than 10 −4 Ω·cm 2 for current densities higher than 2 kA=cm 2 , which is very promising for LD applications and is one of the best results among those reported in the literature. 4,8,23,29) An interesting remark can be given from the comparison of the differential resistivities of the standard LD, TJ LD, and test TJ n=p ++ =n ++ structure. Figure 4 shows the differential resistivities of the standard PAMBE and TJ LDs (the I-V characteristics of which are depicted in Fig.…”

mentioning

confidence: 99%

“…However, recent reports have shown that by exploiting the strong internal piezoelectric fields present in nitride heterostructures, it is possible to reduce the depletion width of the p-n junction and achieve the strong tunneling of carriers through such a structure. 22,23) For example, by inserting an InGaN well into the p-n junction region, it is possible to reduce the specific resistance of the junction to 10 −4 Ω·cm. 2,4) It was also demonstrated that by introducing GdN nanoislands, the tunneling through the midgap states inside the TJ was enhanced.…”

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confidence: 99%

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True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

Skierbiszewski

Muzioł

Nowakowski-Szkudlarek

et al. 2018

Appl. Phys. Express

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We demonstrate true-blue 450 nm tunnel junction (TJ) laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy (PAMBE). The absence of hydrogen during PAMBE growth allows us to achieve TJs with low resistance. We compare TJ LDs with LDs of standard construction with p-type metal contact. For both types of LD, the threshold current density is around 3 kA/cm 2 and the slope efficiency is 0.5 W/A. We do not observe any significant changes in optical losses and differential gain in TJ LDs compared with standard LDs. The differential resistivity of the TJs for current densities higher than 2 kA/cm 2 is below 10 %4 Ω&cm 2 .

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mentioning

confidence: 99%

mentioning

confidence: 99%

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

Skierbiszewski

Muzioł

Nowakowski-Szkudlarek

et al. 2018

Appl. Phys. Express

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“…55 There are two primary methods for overcoming these issues: (1) activate the p-GaN using a side-wall activation method, 55 or (2) growth of the n-type TJ layers using molecular-beam epitaxy (MBE). 27,48,[56][57][58][59][60] Sidewall activation has been demonstrated, however it shows limitations in activating large-area devices (300 µm × 300 µm mesa size). 55 Because VCSELs are very small devices (≤ 100 µm × ≤ 100 µm mesa size), it seems quite plausible that side-wall activation could be used to make high quality III-nitride TJ intracavity contacts for VCSELs using MOCVD, which would greatly simplify the processing and growth procedure, compared to the MOCVD-MBE TJ VCSEL method.…”

Section: Overview Of Iii-nitride Tunnel Junctionsmentioning

confidence: 99%

“…The MOCVD-MBE approach has also faced some challenges in achieving high quality TJs. To overcome this, researchers have inserted AlN, 56 InGaN, 57,58 or GdN nanoisland 59 layers between the p-GaN and n-GaN TJ layers, which have improved tunneling. The AlN and InGaN interlayers, in particular, leverage the polarization fields present in the c- Figure 1 (color online) Refractive index and absorption coefficient dispersion for multi-layer ITO films used in some of UCSB's III-nitride VCSELs with ITO intracavity contacts.…”

Section: Overview Of Iii-nitride Tunnel Junctionsmentioning

confidence: 99%

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

et al. 2016

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We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with IIInitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 µm aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of ~550 µW with a threshold current density of ~3.5 kA/cm 2 , while the ITO VCSELs show peak powers of ~80 µW and threshold current densities of ~7 kA/cm 2 .

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“…Since the important inventions mainly by Nakamura, Akasaki, and Amano in the development of GaN-based light-emitting diodes (LEDs) (they received Nobel Prize in Physics for the invention of blue LED in 2014) [3][4][5], these devices were widely investigated to enhance the external quantum efficiency and optical power as well as to reduce the electrical injection issues [6,7]. GaN-based LEDs are mostly grown with metalorganic chemical vapor deposition (MOCVD) on c-plane sapphire substrates.…”

Section: Color-converter Qds On Gan-based Devicesmentioning

confidence: 99%

Quantum Dot–Incorporated Hybrid Light-Emitting Diode

Hasanov¹

2017

Quantum-Dot Based Light-Emitting Diodes

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Quantum dots are very promising candidates to enhance the performance of hybrid devices. Their size-dependent wavelength tunability owing to quantum size effect, narrow full width at half maximum, high quantum yield, and several other optoelectronic properties enable their use as potential components in GaN-based light-emitting diodes. This chapter explains methods to fabricate color-converted and white light-emitting diodes with the incorporation of semiconductor quantum dots.

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InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

Cited by 66 publications

References 30 publications

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

Quantum Dot–Incorporated Hybrid Light-Emitting Diode

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