InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K

Damilano, B.; Grandjean, N.; Massies, J.; Siozade, Laure; Leymarie, J.

doi:10.1063/1.1289915

Cited by 75 publications

(41 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In fact, by increasing h (for the same value of the angle α ), the QDs basis radius increases, so the electron run away from the hole. Our calculations of the field dependence of the ground state transition energies T are in good agreement with photoluminescence measurements [5,13].…”

supporting

confidence: 81%

See 1 more Smart Citation

Ground state transition energies of electron and hole in biased In_xGa_1–xN/GaN quantum dots

Turki-BenAli

Bennaceur

2006

Phys. Status Solidi (c)

View full text Add to dashboard Cite

We are interested in our study of the III-V nitrides to the In x Ga 1-x N/GaN quantum dots, where x = 17.5 % denotes the indium concentration. The adopted model to describe these III-V nitride quantum dots is that of In x Ga 1-x N truncated cones of radius r c lying on wetting layer, both buried into GaN matrix. This model is consistent with recent experimental works. We examine the internal electric field and radius r c of the quantum dots effects on the ground state transition energies of the electron and the hole. Our results are in sound agreement with recent experimental data.1 Introduction III-V nitride semiconductors have been investigated very extensively in the last decade. GaN is a direct and wide band-gap semiconductor and when alloyed with InN and AlN, a spectrum from visible to ultraviolet can be covered. III-V nitride nanostructures are strongly polar crystal as compared to GaAs-based compounds, and thus shown a piezoelectric effect. Macroscopic polarization, both in intrinsic and piezoelectric nature, is unusually strong in III-V nitride, and the built in electric fields in the layers of nitride-based nanostructures, stemming from polarization changes at heterointerfaces. The strong built in electric field of the order of few MV/cm is oriented along the growth direction and has opposite sign inside and outside the quantum dots (QDs) [1,2]. This is considerably stronger than in GaAs-based nanostructures because the piezoelectric constants in nitrides are orders of magnitude greater than in other III-V compounds. Our main goal is to examine how the electric field and the QDs basis radius r c affect the ground state transition energies of the electron and the hole. We are essentially interested to In x Ga 1-x N/GaN III-V nanostructures QDs.The paper is organized in the following way. In Section 2, we present the model and our numerical approach. In Section 3, the electron and the hole energy levels have been calculated. This is followed in Section 4 by the presentation of how basis radius of the QDs and the applied electric field affect the electron-hole ground state transition energies. Finally, in Section 5 we summarize the main conclusions.

show abstract

supporting

confidence: 81%

“…Moreover, the ground state transition energy values are all little than the gap energy of InGaN and are shifted to less energies when h increases. The considered values of the QDs height are sufficient for electric field effects to dominate the confinement ones [13]. We note that by increasing the QDs height h, the electron getaway from the hole.…”

mentioning

confidence: 99%

Ground state transition energies of electron and hole in biased In_xGa_1–xN/GaN quantum dots

Turki-BenAli

Bennaceur

2006

Phys. Status Solidi (c)

View full text Add to dashboard Cite

show abstract

“…1). Usually the difference between the energy of SE and CER transition (i.e., the Stokes shift) is evidence of the localized character of SE [20][21][22][23]. However, such a comparison is more complex for polar QWs due to the large built-in electric field related to polarization effects.…”

Section: Resultsmentioning

confidence: 99%

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

et al. 2013

View full text Add to dashboard Cite

It is shown that in polar InGaN QWs emitting in the blue-green spectral region a Stokes shift between spontaneous emission (SE) and optical transition observed in contactless electroreflectance (CER) spectrum (absorptionlike technique) can be observed even at room temperature, despite the fact that the SE is not associated with localized states. Time resolved photoluminescence measurements clearly confirm that the SE is strongly localized at low temperatures whereas at room temperature the carrier localization disappears and the SE can be attributed to the fundamental transition in this QW. The Stokes shift is observed in this QW system because of the large built-in electric field, i.e., the CER transition is a superposition of all optical transitions with non-zero electron-hole overlap integrals and, therefore, the energy of this transition does not correspond to the fundamental transition of InGaN QW. Lasing from this QW has been observed at the wavelength of 475 nm, whereas the SE was observed at 500 nm. The 25 nm shift between the lasing and SE is observed because of a screening of the built-in electric field by photogenerated carriers. However, our analysis shows that the built-in electric field inside the InGaN QW region is not fully screened under the lasing conditions.

show abstract

“…We also observe that an increase in QW thickness which is sometimes used to achieve long wavelength emission [8] does not yield as high luminescence intensities in the green region as the other two methods. This can be expected because of the strong decrease of the electron and hole wavefunction overlap for wider QWs due to the strong band bending in nitride semiconductors.…”

Section: Movpe Growth Of Inganmentioning

confidence: 77%

Gallium‐nitride‐based devices on silicon

Dadgar

Poschenrieder

Daumiller

et al. 2003

phys. stat. sol. (c)

View full text Add to dashboard Cite

GaN devices on Si are interesting for low-cost, high-power devices as LEDs and FETs. Until recently, most LED and FET devices suffered from cracking and low output power and additionally, from high series resistances for vertically contacted LEDs. Here, we give a brief overview on state of the art crackfree, bright LEDs with an output power up to 0.42 mW and AlGaN/GaN FETs with an output power of 2.5 W/mm at 2 GHz.

show abstract

InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K

Cited by 75 publications

References 19 publications

Ground state transition energies of electron and hole in biased In_xGa_1–xN/GaN quantum dots

Ground state transition energies of electron and hole in biased In_xGa_1–xN/GaN quantum dots

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

Gallium‐nitride‐based devices on silicon

Contact Info

Product

Resources

About

InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K

Cited by 75 publications

References 19 publications

Ground state transition energies of electron and hole in biased InxGa1–xN/GaN quantum dots

Ground state transition energies of electron and hole in biased InxGa1–xN/GaN quantum dots

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

Gallium‐nitride‐based devices on silicon

Contact Info

Product

Resources

About

Ground state transition energies of electron and hole in biased In_xGa_1–xN/GaN quantum dots

Ground state transition energies of electron and hole in biased In_xGa_1–xN/GaN quantum dots