InGaN/GaN multiple quantum well concentrator solar cells

Dahal, R.; Li, J.; Aryal, Krishna; Lin, J. Y.; Jiang, Hongxing

doi:10.1063/1.3481424

Cited by 191 publications

(137 citation statements)

References 20 publications

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“…This results in increased incorporation of impurities [8] or other point and V-defect related non-radiative recombination centers [9]. Instead of thick layers, multiple quantum well (MQW) absorption layers can be used, leading to increases the indium composition (x~0.25-0.3) [10,11], and higher internal quantum efficiencies (>70%) at high energies (~3eV) [11]. These energies though are not near the optimum bandgap energies necessary for an efficient single gap solar cell in power conversion efficiencies (PCE) below 3% [10].…”

Section: Introductionmentioning

confidence: 99%

“…Instead of thick layers, multiple quantum well (MQW) absorption layers can be used, leading to increases the indium composition (x~0.25-0.3) [10,11], and higher internal quantum efficiencies (>70%) at high energies (~3eV) [11]. These energies though are not near the optimum bandgap energies necessary for an efficient single gap solar cell in power conversion efficiencies (PCE) below 3% [10]. If InGaN materials are going to gain serious consideration for photovoltaics, a new approach is required.…”

Section: Introductionmentioning

confidence: 99%

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III-nitride core–shell nanowire arrayed solar cells

Wierer

Li²,

Koleske³

et al. 2012

Nanotechnology

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A solar cell based on a III-nitride hybrid nanowire-film architecture is demonstrated. It consists of a vertically-aligned array of InGaN/GaN multi-quantum well core-shell nanowires, electrically connected by a coalesced p-type InGaN canopy layer. This hybrid structure allows for standard planar device processing, solving an important challenge with nanowire device integration. It also enables various advantages such as higher indium composition InGaN layers via elastic strain relief, efficient carrier collection through thin layers, and enhanced light trapping. This proof-of-concept nanowire-based device presents a path forward for highefficiency III-nitride solar cells. Fabricated III-nitride nanowire solar cells exhibit a photoresponse out to 2.1eV and short circuit current density of ~1 mA/cm 2 (1 sun AM1.5G). 4 ACKNOWLEDGMENTS5

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

III-nitride core–shell nanowire arrayed solar cells

Wierer

Li²,

Koleske³

et al. 2012

Nanotechnology

View full text Add to dashboard Cite

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“…From these considerations, one should determine the optimum FLG characteristics for a given base material, range of the loading, and applications. Given a strong current interest to the concentrator solar cells [47][48][49][50][51][52][53][54][55] and the problems with their thermal management, in this work we examine a feasibility of using graphene and FLG fillers for heat removal from advanced photovoltaic solar cells.…”

Section: Introductionmentioning

confidence: 99%

Thermal Management of Concentrated Multi-Junction Solar Cells with Graphene-Enhanced Thermal Interface Materials

2017

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Abstract:We report results of experimental investigation of temperature rise in concentrated multi-junction photovoltaic solar cells with graphene-enhanced thermal interface materials. Graphene and few-layer graphene fillers, produced by a scalable environmentally-friendly liquid-phase exfoliation technique, were incorporated into conventional thermal interface materials. Graphene-enhanced thermal interface materials have been applied between a solar cell and heat sink to improve heat dissipation. The performance of the multi-junction solar cells has been tested using an industry-standard solar simulator under a light concentration of up to 2000 suns. It was found that the application of graphene-enhanced thermal interface materials allows one to reduce the solar cell temperature and increase the open-circuit voltage. We demonstrated that the use of graphene helps in recovering a significant amount of the power loss due to solar cell overheating. The obtained results are important for the development of new technologies for thermal management of concentrated photovoltaic solar cells.

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“…15 Accordingly, to maintain the high In composition and high crystal quality, several groups adopted InGaN/GaN MQW solar cells, 16,17 though these solar cells still have a low Jsc and FF. Also, other groups recently reported the carrier transport in InGaN/GaN solar cells by barrier thickness and temperature.…”

Section: Introductionmentioning

confidence: 99%

Investigation of properties of InGaN-based vertical-type solar cells with emission wavelengths in ultraviolet-blue-green regions

et al. 2014

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Abstract. We investigate the properties of InGaN-based vertical-type solar cells having wavelengths ranging from the ultraviolet to green regions. It is well known that InGaN-based solar cells require a high indium composition to obtain high conversion efficiency. However, although InGaN-based solar cells with a high indium composition have been fabricated, their conversion efficiency has not sufficiently increased. Therefore, to further understand carrier transport, we measured the bias-dependent external quantum efficiency. For vertical-type green solar cells with a high indium composition, we confirmed that they have a higher short circuit current than other samples tested due to their broader overlapping region with the solar spectrum, though their fill factor remained low due to their high barrier height and strong piezoelectric field, which caused a reduction in the carrier tunneling rate.

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InGaN/GaN multiple quantum well concentrator solar cells

Cited by 191 publications

References 20 publications

III-nitride core–shell nanowire arrayed solar cells

III-nitride core–shell nanowire arrayed solar cells

Thermal Management of Concentrated Multi-Junction Solar Cells with Graphene-Enhanced Thermal Interface Materials

Investigation of properties of InGaN-based vertical-type solar cells with emission wavelengths in ultraviolet-blue-green regions

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