InGaN–GaN Disk Laser for Blue-Violet Emission Wavelengths

Debusmann, R.; Dhidah, N.; Hoffmann, Veit; Weixelbaum, L.; Brauch, U.; Graf, Thomas; Weyers, M.; Kneissl, Michael

doi:10.1109/lpt.2010.2043668

Cited by 20 publications

(10 citation statements)

References 15 publications

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“…Given the difficulty presented in 4.1 and 4.2 in forming all dielectric mirrors, Sony recently demonstrated yet another version of VCSEL with dielectric mirrors [93] using the concept of "external cavity" where a curved dielectric mirror is coated on the substrate side after substrate thinning [94][95][96]. This implementation, sometimes called thin-disk laser, is possibly the least complicated in terms of both epitaxial growth and device fabrication compared to all other approaches ( Figure 10).…”

Section: Non-epitaxial Dbrs Through Substrate Thinning and Curved Diementioning

confidence: 99%

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

2019

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A distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor microcavities and vertical cavity surface emitting lasers (VCSELs). The success in epitaxial GaAs DBR mirrors paved the way for the ubiquitous deployment of III-V VCSELs in communication and mobile applications. However, a similar development of GaN-based blue VCSELs has been hindered by challenges in preparing DBRs that are mass producible. In this article, we provide a review of the history and current status of forming DBRs for GaN VCSELs. In general, the preparation of DBRs requires an optimization of epitaxy/fabrication processes, together with trading off parameters in optical, electrical, and thermal properties. The effort of epitaxial DBRs commenced in the 1990s and has evolved from using AlGaN, AlN, to using lattice-matched AlInN with GaN for DBRs. In parallel, dielectric DBRs have been studied since 2000 and have gone through a few design variations including epitaxial lateral overgrowth (ELO) and vertical external cavity surface emitting lasers (VECSEL). A recent trend is the use of selective etching to incorporate airgap or nanoporous GaN as low-index media in an epitaxial GaN DBR structure. The nanoporous GaN DBR represents an offshoot from the traditional epitaxial approach and may provide the needed flexibility in forming manufacturable GaN VCSELs. The trade-offs and limitations of each approach are also presented.

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Section: Non-epitaxial Dbrs Through Substrate Thinning and Curved Diementioning

confidence: 99%

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

2019

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“…Thus, the GaN-based DBRs are usually fabricated using GaN/GaInN layers, as demonstrated at 420 nm [89,90]. InGaN-based gain chips have also been demonstrated with dielectric mirrors using a microchip design at 413 nm [91] and with external cavities at 392 nm [82,92] and 440-445 nm [93]. However, the overall concepts of such VECSELs and their feasibility for practical applications remain questionable, owing to the early stage of development for GaN-based vertical structures.…”

Section: Gain Mirror Technologymentioning

confidence: 99%

Optically pumped VECSELs: review of technology and progress

Guina

Rantamäki

Härkönen

2017

J. Phys. D: Appl. Phys.

193

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“…Semiconductor disk lasers (SDLs), also known as VECSELs [14], provide high power in continuous wave operation with good beam quality, narrow linewidth and tunable wavelength. One of the main advantages is that the gain medium can be wavelength-engineered whilst retaining the ability to operate with high spatial brightness: while the first SDLs worked at wavelengths around 1 μm, fundamental operation has since been demonstrated at a wide variety of wavelengths, from 640 nm to beyond 5 μm [15], [16], with pioneering demonstrations at wavelengths as short as 400 nm [17]. Single frequency UVC emission has previously been demonstrated by Kaneda et al by obtaining multi-Watt operation from an infrared SDL and then achieving efficient second and fourth harmonic generation in successive external enhancement cavities [18], [19].…”

Section: Introductionmentioning

confidence: 99%

Tunable, CW Laser Emission at 225 nm via Intracavity Frequency Tripling in a Semiconductor Disk Laser

Rodríguez-García

Pabouf

Hastie

2017

IEEE J. Select. Topics Quantum Electron.

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Numerous applications would benefit from a compact laser source with tunable, continuous-wave emission in the deep ultraviolet (wavelengths <250 nm); however, very few laser sources have been demonstrated with direct emission in this spectral region and options are generally limited to pulsed, fixed wavelength sources or complex and impractical setups for nonlinear frequency mixing of the emission of several infrared lasers in various external enhancement cavities. Here, we propose an all-solid-state, continuous-wave, tunable laser with emission between 224 and 226 nm via intracavity frequency tripling in an AlGaInP-based semiconductor disk laser (SDL). Output power up to 78 µW is achieved in continuous wave operation, with a tuning range over 350 cm −1 . AlGaInP-based SDLs may be designed to emit anywhere between ∼640-690 nm such that wavelengths between 213 and 230 nm may be targeted for specific applications using a similar set-up. An in-depth study of the nonlinear conversion has been carried out to understand the limitations of the set-up, namely large walk-off angles for phase-matching in the nonlinear crystals, and the potential for increasing the output power to several milli-Watts. This is, to the authors' knowledge, the first implementation of intracavity frequency tripling in a visible SDL and the shortest wavelength emitted from an SDL system.

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InGaN–GaN Disk Laser for Blue-Violet Emission Wavelengths

Cited by 20 publications

References 15 publications

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

Distributed Bragg Reflectors for GaN-Based Vertical-Cavity Surface-Emitting Lasers

Optically pumped VECSELs: review of technology and progress

Tunable, CW Laser Emission at 225 nm via Intracavity Frequency Tripling in a Semiconductor Disk Laser

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