InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped  Strained-Layer Superlattices

Nakamura, Shuji; Senoh, Masayuki; Nagahama, Shin–ichi; Iwasa, Naruhito; Yamada, Takehiro; Matsushita, Toshio; Kiyoku, Hiroyuki; Sugimoto, Yasunobu; Kozaki, Tokuya; Umemoto, Hitoshi; Sano, Masahiko; Chocho, Kazuyuki

doi:10.1143/jjap.36.l1568

Cited by 484 publications

(201 citation statements)

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“…Purified hydrogen and argon were used as carrier gases. Silane and bis-cyclopentadienyl magnesium (Cp) 2 Mg were used for n-and p-type doping, respectively. The growth process began with heating the template in an ambient of ammonia and hydrogen.…”

Section: Growth and Characterizationmentioning

confidence: 99%

“…Currently, sapphire and SiC substrates are widely used in nitride-based technology [1,2]. Device quality III-nitride materials are commonly grown on sapphire by metal organic chemical vapor deposition (MOCVD) utilizing a two-step method that includes nucleation layer deposition at a low temperature followed by annealing and epilayer growth at a higher temperature.…”

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confidence: 99%

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Growth and Characterization of LED Structures Grown by MOCVD on HVPE‐Grown GaN Templates

Usikov

Lundin

Заварин

et al. 2002

phys. stat. sol. (c)

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PACS: 68.55.Jk; 68.65.AcOptical and structural properties of light emitting diode (LED) structures grown by MOCVD on both GaN/sapphire templates and sapphire substrates are presented. The GaN/sapphire 3-5 mm thick templates were grown by HVPE on c-plane sapphire. Si-doping can alter defect formation in the templates. Depending on the LED structure design and growth conditions, the EL peak position varied in the range of 380 to 430 nm. MOCVD deposition improved the morphology of the HVPE-grown surface. The LED structures grown on GaN/sapphire templates had similar or superior EL intensity compared to samples grown on sapphire substrates.Introduction One of the challenges remaining in the epitaxial growth of III-N materials is the absence of a suitable lattice-matched substrate. Currently, sapphire and SiC substrates are widely used in nitride-based technology [1,2]. Device quality III-nitride materials are commonly grown on sapphire by metal organic chemical vapor deposition (MOCVD) utilizing a two-step method that includes nucleation layer deposition at a low temperature followed by annealing and epilayer growth at a higher temperature. Subsequently, a buffer layer and the device structure are grown. Despite these shortcomings, blue, green and white light emitting diodes (LEDs), violet laser diodes (LDs), field effect transistors, and ultraviolet photodiodes have been developed. However, the structures suffer from a high density of threading dislocations and strain-induced problems that strongly affect device performance. GaN grown on sapphire with a low temperature nucleation layer still has a dislocation density as high as 10 8 to 10 10 cm --2 . These dislocations are a major cause of device degradation, particularly for LDs, which operate at high current density [3].Alternatively, due to its high growth rate and high material quality, hydride vapor phase epitaxy (HVPE) is an approach for fabricating GaN quasi-bulk material and GaN templates to be used as substrates for III-N device structure growth. A growth procedure on III-N templates does not require a nucleation layer and a thick GaN buffer layer. The homoepitaxial nature of growth on templates can improve crystal quality, and thus, device performance. Other benefits of GaN and AlGaN templates are reduced growth time and precursor consumption, reduced downtime and maintenance, and increased productivity in MOCVD reactors.

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Section: Growth and Characterizationmentioning

confidence: 99%

mentioning

confidence: 99%

Growth and Characterization of LED Structures Grown by MOCVD on HVPE‐Grown GaN Templates

Usikov

Lundin

Заварин

et al. 2002

phys. stat. sol. (c)

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“…1,2,3,4 The active layers in high efficiency emitters, such as blue/green light emitting diodes and blue/purple laser diodes, contain InGaN alloys. Time scales for carrier recombination, transport, and quantum well capture in the ultrafast regime determine the efficiency of optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast carrier relaxation in GaN,In0.05Ga0.95N,and an
Özgür
¹
,
Everitt
²

2003
Phys. Rev. B

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Room temperature, wavelength non-degenerate ultrafast pump/probe measurements were performed on GaN and InGaN epilayers and an InGaN multiple quantum well structure. Carrier relaxation dynamics were investigated as a function of excitation wavelength and intensity. Spectrallyresolved sub-picosecond relaxation due to carrier redistribution and QW capture was found to depend sensitively on the wavelength of pump excitation. Moreover, for pump intensities above a threshold of 100 µJ/cm 2 , all samples demonstrated an additional emission feature arising from stimulated emission (SE). SE is evidenced as accelerated relaxation (< 10 ps) in the pump-probe data, fundamentally altering the re-distribution of carriers. Once SE and carrier redistribution is completed, a slower relaxation of up to 1 ns for GaN and InGaN epilayers, and 660 ps for the MQW sample, indicates carrier recombination through spontaneous emission.

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“…Significant research and commercial interests have continued to focus on the development of indium-based III-nitride materials and associated devices for UV-visible light emitters [1,2]. The success in developing light sources has included the commercialization of blue, green and amber light emitting diodes and violet laser diodes.…”

Section: Introductionmentioning

confidence: 99%

Excitonic field screening and bleaching in InGaN/GaN multiple quantum wells

Chen

Kirkey

Furis

et al. 2003

Solid State Communications

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Photoinduced carrier dynamics in a sequence of InGaN/GaN multiple quantum wells (MQWs) are studied by employing steady state and ultrafast spectroscopy at room temperature. Time-resolved photoluminescence (PL) measured short carrier lifetimes of , 140 ps at room temperature. Steady state differential transmission was used to measure the in-well field screening due to the photoinjected carriers. The observed offset in emission energy from excitonic screening energies is consistent with the emission of carriers through localized states slightly below the excitonic resonance energy. Furthermore, time-resolved differential transmission with amplified pulses, where significant carrier densities can be optically generated, provides evidence of both excitonic bleaching and field screening in these InGaN quantum wells (QWs). The comparison of the time-resolved differential absorption spectra at various carrier densities allows us to identify different carrier recombination dynamics in the InGaN well and to separate the field screening from the bleaching effects. Finally, the extreme prolongation of the carrier recombination lifetime up to , 4 ms suggests the spatial separation between electrons and holes under the large in-well fields. q

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InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

Cited by 484 publications

References 12 publications

Growth and Characterization of LED Structures Grown by MOCVD on HVPE‐Grown GaN Templates

Growth and Characterization of LED Structures Grown by MOCVD on HVPE‐Grown GaN Templates

Ultrafast carrier relaxation in GaN,In0.05Ga0.95N,and an
Özgür
¹
,
Everitt
²

2003
Phys. Rev. B

Excitonic field screening and bleaching in InGaN/GaN multiple quantum wells

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InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

Cited by 484 publications

References 12 publications

Growth and Characterization of LED Structures Grown by MOCVD on HVPE‐Grown GaN Templates

Growth and Characterization of LED Structures Grown by MOCVD on HVPE‐Grown GaN Templates

Ultrafast carrier relaxation in GaN,In0.05Ga0.95N,and anÖzgür1, Everitt2 2003Phys. Rev. B

Excitonic field screening and bleaching in InGaN/GaN multiple quantum wells

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Product

Resources

About

Ultrafast carrier relaxation in GaN,In0.05Ga0.95N,and an
Özgür
¹
,
Everitt
²

2003
Phys. Rev. B