InGaAs quantum wells on wafer-bonded InP∕GaAs substrates

Abstract

Wafer bonding and hydrogen implantation exfoliation techniques have been used to fabricate a thin InP template layer on GaAs with intermediate silicon nitride bonding layers. This template layer was used to directly compare subsequent metal organic vapor phase epitaxial growth of InGaAs∕InAlAs quantum-well structures on these wafer-bonded templates to growth on a standard InP substrate. Chemical mechanical polishing of the bonded structure and companion InP substrates was assessed. No effects from the coefficient of thermal mismatch are detected up to the growth temperature, and compositionally equivalent structures are grown on the wafer-bonded InP template and the bare InP substrate. However, after growth dislocation, loops can be identified in the InP template layer due to the ion implantation step. These defects incur a slight mosaic tilt but do not yield any crystalline defects in the epitaxial structure. Low-temperature photoluminescence measurements of the InGaAs grown on the template structure and the InP substrate exhibit near-band-edge luminescence on the same order; this indicates that ion implantation and exfoliation is a viable technique for the integration of III-V materials.

Chemical Mechanical Polishing of Exfoliated III-V Layers

“…However, previous work with InP has shown that the removal rate is on the order of 10 nm/minute [9] and the results here are consistent with that value. The ability to controllably polish exfoliated layers using these CMP parameters is demonstrated on an exfoliated InP layer that was transferred to a different substrate (GaAs in this case).…”

“…This is particularly useful for the CMP of wafer bonding and layer transfer schemes, where submicron layers need to be planarized. [9] These results provide a scientific and quantitative basis for CMP of III-V exfoliated layers beyond the more typically mentioned and less …”

Integration of InP/InGaAs/InP p-i-n photodiodes on silicon via wafer bonding and hydrogen-induced layer exfoliation

“…In the case of ion-cutting (or Smart CutTM) process based on wafer bonding and hydrogeninduced layer exfoliation, it is common to transfer III-V layers onto Si. The transferred structure is then used as a template for subsequent epitaxial re-growth of device structures [3][4][5]. Due to the rough as-transferred surface and considerable implantation-induced radiation damage near the surface region of transferred structure, a chemical mechanical polishing (CMP) process and/or other surface treatments are required before re-growth.…”

Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon

“…[1][2][3] InP-based photodetectors and lasers on Si substrates are particularly of interest for optical interconnection purposes since their optical spectra can cover low dispersion and minimum loss wavelengths for optical fiber communications at 1.35 and 1.55 m. 4 To overcome the difficulty of epitaxial growth caused by lattice mismatch between different materials, wafer bonding has been utilized for integration of III-V materials with Si. 4,6,7 Before the regrowth of epitaxial layers, a chemical mechanical polishing is usually required for improving the as-transferred III-V surface flatness and removing the residual hydrogen implantation-induced damage near the surface region. 5 The obtained III-V-on-Si structures have been used as templates for subsequent epitaxial growth of device structures.…”

“…Recently the ion-cut process ͑or Smart-cut®͒ based on hydrogen ion implantation and wafer bonding has been used to integrate III-V layers on Si. [6][7][8] Recently we demonstrated a high quality III-V layer transfer scheme that combines ion cutting together with selective chemical etching. 4,6,7 Before the regrowth of epitaxial layers, a chemical mechanical polishing is usually required for improving the as-transferred III-V surface flatness and removing the residual hydrogen implantation-induced damage near the surface region.…”