InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition

Goel, N.; Majhi, P.; Chui, Chi On; Tsai, W.; Choi, Dong‐Hyun; Harris, James S.

doi:10.1063/1.2363959

Cited by 104 publications

(45 citation statements)

References 9 publications

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“…The sulfur treatment is expected to prevent reoxidation in ambient during transfer to the vacuum ALD system consistent with experiments on InGaAs 30,31 and GaAs. 32 After each step, samples were rinsed in deionized water for 1 min and then dried in N 2 gas.…”

Section: B Cleaning Studysupporting

confidence: 74%

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

Kerr

Chagarov

et al. 2014

The Journal of Chemical Physics

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A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al 2 O 3 gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001).

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Section: B Cleaning Studysupporting

confidence: 74%

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

Kerr

Chagarov

et al. 2014

The Journal of Chemical Physics

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“…The untreated In 0.53 Ga 0.47 As sample has an IL oxide thickness of 1.9 nm and is comparable to the native oxide thickness of 2 nm found on In 0.53 Ga 0.47 As by Kobayashi et al 12 A number of recent publications have demonstrated that ALD deposition of Al 2 O 3 ͓using Al͑CH 3 ͒ 3 ͔ and HfO 2 ͕using Hf͓N͑CH 3 ͒ ϫ͑C 2 H 5 ͔͒ 4 ͖ on GaAs and In x Ga 1−x As substrates can reduce the thickness of interfacial Ga and As oxides during the ALD growth process. 6,7,12,13 This is referred to as an interfacial "self-cleaning process" and is most likely precursor dependent. The thickness of the IL oxide for the untreated sample ͑1.9 nm͒ indicates that limited or no interfacial self-cleaning process is occurring using the Hf͓N͑CH 3 ͒ 2 ͔ 4 and H 2 O water process.…”

Section: Methodsmentioning

confidence: 99%

Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition

Long

O’Connor

Newcomb³

et al. 2009

Journal of Applied Physics

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In this work results are presented on the structural analysis, chemical composition, and interface state densities of HfO2 thin films deposited by atomic layer deposition (ALD) from Hf[N(CH3)(2)](4) and H2O on In0.53Ga0.47As/InP substrates. The structural and chemical properties are investigated using high resolution cross-sectional transmission electron microscopy and electron energy loss spectroscopy. HfO2 films (3-15 nm) deposited on In0.53Ga0.47As are studied following a range of surface treatments including in situ treatment of the In0.53Ga0.47As surface by H2S exposure at 50-350 degrees C immediately following the metal organic vapor phase epitaxy growth of the In0.53Ga0.47As layer, ex situ treatment with (NH4)(2)S, and deposition on the native oxides of In0.53Ga0.47As with no surface treatment. The structural analysis indicates that the In0.53Ga0.47As surface preparation prior to HfO2 film deposition influences the thickness of the HfO2 film and the interlayer oxide. The complete interfacial self-cleaning of the In(0.53)Gas(0.47)As native oxides is not observed using an ALD process based on the Hf[N(CH3)(2)](4) precursor and H2O. Elemental profiling of the HfO2/In0.53Ga0.47As interface region by electron energy loss spectroscopy reveals an interface oxide layer of 1-2 nm in thickness, which consists primarily of Ga oxides. Using a conductance method approximation, peak interface state densities in the range from 6 x 10(12) to 2 x 10(13) cm(-2) eV(-1) are estimated depending on the surface preparation. (C) 2009 American Institute of Physics. [doi:10.1063/1.3243234

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“…Due to the combination of a high electron mobility ($14 000 cm 2 /V s at low doping levels), suitable energy gap ($0.75 eV) and the fact that it can be grown lattice matched in InP, there has been a considerable focus of research attention on InGaAs with a 53% In concentration (i.e., In 0.53 Ga 0.47 As). The electrically active interface defects between the high-k gate oxide and the In 0.53 Ga 0.47 As surface, [7][8][9][10][11][12][13][14][15][16] and fixed charges within the high-k oxide, [15][16][17] have been studied in some detail in the literature. Charge trapping states can also be located in the transition region between the high-k oxide and In 0.53 Ga 0.47 As surface and are often referred to a "slow states" or "border traps".…”

Section: Introductionmentioning

confidence: 99%

An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors

Lin

Gomeniuk

Monaghan

et al. 2013

Journal of Applied Physics

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In this work, we present the results of an investigation into charge trapping in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOS capacitors), which is analysed using the hysteresis exhibited in the capacitance-voltage (C-V) response. The availability of both n and p doped In0.53Ga0.47As epitaxial layers allows the investigation of both hole and electron trapping in the bulk of HfO2 and Al2O3 films formed using atomic layer deposition (ALD). The HfO2/In0.53Ga0.47As and Al2O3/In0.53Ga0.47As MOS capacitors exhibit an almost reversible trapping behaviour, where the density of trapped charge is of a similar level to high-k/In0.53Ga0.47As interface state density, for both electrons and holes in the HfO2 and Al2O3 films. The experimental results demonstrate that the magnitude of the C-V hysteresis increases significantly for samples which have a native oxide layer present between the In0.53Ga0.47As surface and the high-k oxide, suggesting that the charge trapping responsible for the C-V hysteresis is taking place primarily in the interfacial oxide transition layer between the In0.53Ga0.47As and the ALD deposited oxide. Analysis of samples with a range of oxide thickness values also demonstrates that the magnitude of the C-V hysteresis window increases linearly with the increasing oxide thickness, and the corresponding trapped charge density is not a function of the oxide thickness, providing further evidence that the charge trapping is predominantly localised as a line charge and taking place primarily in the interfacial oxide transition layer located between the In0.53Ga0.47As and the high-k oxide. (C) 2013 AIP Publishing LLC

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InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition

Cited by 104 publications

References 9 publications

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition

An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors

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