InGaAs/GaAs 3D architecture formation by strain-induced self-rolling with lithographically defined rectangular stripe arrays

Chun, Ik Su; Verma, Varun B.; Elarde, V.C.; Kim, S. W.; Zuo, Jian‐Min; Coleman, J. J.; Li, Xiuling

doi:10.1016/j.jcrysgro.2007.11.044

Cited by 34 publications

(46 citation statements)

References 30 publications

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“…As shown by Chun et al [23,24], tubes grown on GaAs (001) substrates preferentially roll-up along the ⟨001⟩ directions. Additionally, the actual rolling direction of tubes is determined by geometrical conditions.…”

Section: Resultsmentioning

confidence: 89%

Deviation from Regular Shape in the Early Stages of Formation of Strain-Driven 3D InGaAs/GaAs Micro/Nanotubes

Frigeri¹,

Seravalli²,

Calicchio³

et al. 2017

Journal of Nanomaterials

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Single-crystalline InGaAs/GaAs semiconductor micro/nanotubes have been obtained by the strain-driven self-rolling mechanism. This approach combines the advantages of bottom-up (epitaxial growth) and top-down (postgrowth processing) techniques, offering an exceptional opportunity to realize complex three-dimensional nanoarchitectures by using conventional photolithography and wet-etching processes. The method employed to obtain micro/nanotubes with selected orientation and length is described in detail. By means of high-resolution scanning electron microscopy characterization, we show a clear shape difference between single-wall and multiwalls tubes and we discuss it on the basis of strain release, taking into account also possible shape deformations induced during micro/nanotubes drying. We analyse the In-segregation profile in the nominal In 0.20 Ga 0.80 As/GaAs bilayer and we show its effect on the actual diameter of the tubes, concluding that a more accurate description of the structure should consider an In 0.20 Ga 0.80 As/In 0.10 Ga 0.90 As/GaAs trilayer. This work will be useful to set up reliable methodologies for the realization of straindriven micro/nanotubes with controlled properties, necessary for their implementation in a large number of application fields.

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Section: Resultsmentioning

confidence: 89%

Deviation from Regular Shape in the Early Stages of Formation of Strain-Driven 3D InGaAs/GaAs Micro/Nanotubes

Frigeri¹,

Seravalli²,

Calicchio³

et al. 2017

Journal of Nanomaterials

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“…A macroscopic continuum mechanical model has been used to evaluate the tube diameter D using the following equation [6]- [8]: [5], [7]- [11].…”

Section: Resultsmentioning

confidence: 99%

“…The mask contained arrays of squares and rectangles with width and length ranging from 1 to 50 µm, and with varied orientations. Detailed patterning procedure was described previously [5]. SEM imaging was used to examine the topography, diameter of the formed tubes.…”

Section: Methodsmentioning

confidence: 99%

Controlled Assembly and Dispersion of Strain-Induced InGaAs/GaAs Nanotubes

Chun

2008

IEEE Trans. Nanotechnology

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Abstract-Group III-V semiconductor nanotubes (SNTs) are formed when strained planar bilayers are released from the substrate. Compared to other nanotechnology building blocks, one of the main advantages of SNTs is the capability of precise positioning due to the top-down fabrication approach. In this letter, we demonstrate large-area assembly of ordered arrays of In x Ga 1 −x As/GaAs nanotubes and the dispersion of their freestanding form into solution and onto foreign substrates. In addition, we systematically investigate the crystal orientation dependence of rolling behavior using a wheel configuration, which serves as a guide for assembly homogeneity. Theoretical and experimental evaluations of tube diameters are also discussed.

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“…In particular, tungsten has a convenient precursor chemical -WF 6 . This allows conformal deposition of tungsten films over various patterned structures.…”

Section: Chemical Vapor Deposition (Cvd)mentioning

confidence: 99%

“…This covers the full range of Z wire array applications. Other systems (InGaAs/GaAs) have been used elsewhere to generate much tighter curvatures in the sub-micron scale [6]. Several variations on the strained AlGaAs/GaAs design were grown and processed to test the fabrication of semiconductor supports prior to integration with metal wires.…”

Section: Gaas Support Cylinder Characterizationmentioning

confidence: 99%

Microfabricated wire arrays for Z-pinch.

Spahn¹,

Rowen²,

Cich³

et al. 2008

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Microfabrication methods have been applied to the fabrication of wire arrays suitable for use in Z. Self-curling GaAs/AlGaAs supports were fabricated as an initial route to make small wire arrays (4mm diameter). A strain relief structure that could be integrated with the wire was designed to allow displacements of the anode/cathode connections in Z. Electroplated gold wire arrays with integrated anode/cathode bus connections were found to be sufficiently robust to allow direct handling. Platinum and copper plating processes were also investigated. A process to fabricate wire arrays on any substrate with wire thickness up to 35 microns was developed. Methods to handle and mount these arrays were developed. Fabrication of wire arrays of 20mm diameter was demonstrated, and the path to 40mm array fabrication is clear. With some final investment to show array mounting into Z hardware, the entire process to produce a microfabricated wire array will have been demonstrated.

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InGaAs/GaAs 3D architecture formation by strain-induced self-rolling with lithographically defined rectangular stripe arrays

Cited by 34 publications

References 30 publications

Deviation from Regular Shape in the Early Stages of Formation of Strain-Driven 3D InGaAs/GaAs Micro/Nanotubes

Deviation from Regular Shape in the Early Stages of Formation of Strain-Driven 3D InGaAs/GaAs Micro/Nanotubes

Controlled Assembly and Dispersion of Strain-Induced InGaAs/GaAs Nanotubes

Microfabricated wire arrays for Z-pinch.

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