2000
DOI: 10.1016/s0040-6090(00)00826-9
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Infrared study of adsorption and thermal decomposition of Si2H6 on Si(100)

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Cited by 28 publications
(19 citation statements)
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“…As this radical tends to be stacked even on unstable adsorption sites, crystalline Si film formation is difficult; the Si film, therefore, tends to become amorphous (Figure 9a). By contrast, the case of using the plasma‐treated SiH 4 as a precursor, because Si 2 H 6 gas is contained in the plasma‐treated SiH 4 gas and contains a Si–Si bond, which exhibits the weakest binding energy in the Si 2 H 6 molecule, easily undergoes thermal decomposition to generate two SiH 3 radicals [ 53,54 ] : Si2normalH62SiH3.…”
Section: Resultsmentioning
confidence: 99%
“…As this radical tends to be stacked even on unstable adsorption sites, crystalline Si film formation is difficult; the Si film, therefore, tends to become amorphous (Figure 9a). By contrast, the case of using the plasma‐treated SiH 4 as a precursor, because Si 2 H 6 gas is contained in the plasma‐treated SiH 4 gas and contains a Si–Si bond, which exhibits the weakest binding energy in the Si 2 H 6 molecule, easily undergoes thermal decomposition to generate two SiH 3 radicals [ 53,54 ] : Si2normalH62SiH3.…”
Section: Resultsmentioning
confidence: 99%
“…Si-H x (x = 1, 2, 3) [10][11][12][13][14][15][16][17][18][19][20][21][22], or vacancyhydrogen complexes, V n -H m [15,16,22,23], can be detected. Around 2000 cm -1 the Raman modes of H-saturated dangling bonds, i.e.…”
Section: Resultsmentioning
confidence: 99%
“…2 the µRS analysis of H-plasma treated and subsequently for 10 min at 550 °C either in forming gas or air annealed Cz Si samples is shown. The central maximum is dominated by the SiH and SiH 2 species [10,11,14,[18][19][20][21]. The central peak at ∼ 2100 cm -1 is surrounded by several adjacent peaks located on both sides in the flanks of the band (e.g.…”
Section: E1023mentioning
confidence: 99%
“…Whereas the former peak from the SiH set at 2226 cm À1 gradually slowly increases, the latter two disappear within 6 and 10 min. Origin of the vanishing absorption peaks is not clear but we suppose that they could manifest the presence of superficial states of small hydrogenated silicon clusters grown onto the layer surface [28,29]. The SiH stretching vibration at 2226 cm À1 seems to be due to (OSi)SiH(OH) group.…”
Section: Silicon Dioxidementioning
confidence: 88%
“…Dm where V is the volume of the cell (692 cm 3 ), T temperature (300 K), M Si and M O the relative weights of silicon and oxygen (28,16), k Boltzmann's constant (1.38.10 À23 J K À1 ), u the weight unit (1.66.10 À27 kg), DP the partial pressure increase due to oxygen (18 Pa) and Dm the target weight loss (2.14 mg). This value is in a good agreement with x = 1.89 obtained by XPS analysis.…”
Section: Silicon Dioxidementioning
confidence: 99%