“…As this radical tends to be stacked even on unstable adsorption sites, crystalline Si film formation is difficult; the Si film, therefore, tends to become amorphous (Figure 9a). By contrast, the case of using the plasma‐treated SiH 4 as a precursor, because Si 2 H 6 gas is contained in the plasma‐treated SiH 4 gas and contains a Si–Si bond, which exhibits the weakest binding energy in the Si 2 H 6 molecule, easily undergoes thermal decomposition to generate two SiH 3 radicals [ 53,54 ] : …”
We propose a pretreatment method for monosilane (SiH4) gas by high‐density plasma toward the relatively low‐temperature formation (≤600°C) of a crystalline Si film by thermal chemical vapor deposition (TCVD). SiH4 reaction behaviors with the plasma are investigated by using gas‐phase Fourier‐transform infrared spectroscopy. The dependence of the Si2H6 formation characteristics on total gas flow rate and input microwave power is examined. Si2H6 gas yields with the plasma treatment for SiH4 gas increased with decreasing input microwave power and increased with increasing total gas flow rate. Si films are prepared by TCVD using the plasma‐treated SiH4 gas. As a result, the pretreatment for SiH4 gas by high‐density plasma affects not only the deposition rate but also the crystallinity of the obtained Si film. The mechanism by which Si film formation is improved by plasma treatment is discussed.
“…As this radical tends to be stacked even on unstable adsorption sites, crystalline Si film formation is difficult; the Si film, therefore, tends to become amorphous (Figure 9a). By contrast, the case of using the plasma‐treated SiH 4 as a precursor, because Si 2 H 6 gas is contained in the plasma‐treated SiH 4 gas and contains a Si–Si bond, which exhibits the weakest binding energy in the Si 2 H 6 molecule, easily undergoes thermal decomposition to generate two SiH 3 radicals [ 53,54 ] : …”
We propose a pretreatment method for monosilane (SiH4) gas by high‐density plasma toward the relatively low‐temperature formation (≤600°C) of a crystalline Si film by thermal chemical vapor deposition (TCVD). SiH4 reaction behaviors with the plasma are investigated by using gas‐phase Fourier‐transform infrared spectroscopy. The dependence of the Si2H6 formation characteristics on total gas flow rate and input microwave power is examined. Si2H6 gas yields with the plasma treatment for SiH4 gas increased with decreasing input microwave power and increased with increasing total gas flow rate. Si films are prepared by TCVD using the plasma‐treated SiH4 gas. As a result, the pretreatment for SiH4 gas by high‐density plasma affects not only the deposition rate but also the crystallinity of the obtained Si film. The mechanism by which Si film formation is improved by plasma treatment is discussed.
“…Si-H x (x = 1, 2, 3) [10][11][12][13][14][15][16][17][18][19][20][21][22], or vacancyhydrogen complexes, V n -H m [15,16,22,23], can be detected. Around 2000 cm -1 the Raman modes of H-saturated dangling bonds, i.e.…”
Section: Resultsmentioning
confidence: 99%
“…2 the µRS analysis of H-plasma treated and subsequently for 10 min at 550 °C either in forming gas or air annealed Cz Si samples is shown. The central maximum is dominated by the SiH and SiH 2 species [10,11,14,[18][19][20][21]. The central peak at ∼ 2100 cm -1 is surrounded by several adjacent peaks located on both sides in the flanks of the band (e.g.…”
By µ-Raman spectroscopy the formation of hydrogen related defects (vacancy-hydrogen complexes, hydrogen saturated silicon dangling bonds, H 2 molecules in multi-vacancies and voids/ platelets) has been investigated in H-implanted and subsequently H-plasma exposed and annealed Czochralski (Cz) silicon wafers. Annealing was done either in air or in an ambient containing hydrogen (forming gas). The investigations were applied under conditions, which are relevant for ion-cut processes and layer exfoliation in Cz Si for SOI-wafer fabrication at reduced implantation doses (as compared to standard procedures like the smart-cut process).
“…Whereas the former peak from the SiH set at 2226 cm À1 gradually slowly increases, the latter two disappear within 6 and 10 min. Origin of the vanishing absorption peaks is not clear but we suppose that they could manifest the presence of superficial states of small hydrogenated silicon clusters grown onto the layer surface [28,29]. The SiH stretching vibration at 2226 cm À1 seems to be due to (OSi)SiH(OH) group.…”
Section: Silicon Dioxidementioning
confidence: 88%
“…Dm where V is the volume of the cell (692 cm 3 ), T temperature (300 K), M Si and M O the relative weights of silicon and oxygen (28,16), k Boltzmann's constant (1.38.10 À23 J K À1 ), u the weight unit (1.66.10 À27 kg), DP the partial pressure increase due to oxygen (18 Pa) and Dm the target weight loss (2.14 mg). This value is in a good agreement with x = 1.89 obtained by XPS analysis.…”
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