We propose a pretreatment method for monosilane (SiH4) gas by high‐density plasma toward the relatively low‐temperature formation (≤600°C) of a crystalline Si film by thermal chemical vapor deposition (TCVD). SiH4 reaction behaviors with the plasma are investigated by using gas‐phase Fourier‐transform infrared spectroscopy. The dependence of the Si2H6 formation characteristics on total gas flow rate and input microwave power is examined. Si2H6 gas yields with the plasma treatment for SiH4 gas increased with decreasing input microwave power and increased with increasing total gas flow rate. Si films are prepared by TCVD using the plasma‐treated SiH4 gas. As a result, the pretreatment for SiH4 gas by high‐density plasma affects not only the deposition rate but also the crystallinity of the obtained Si film. The mechanism by which Si film formation is improved by plasma treatment is discussed.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.