Infrared studies combined with hydrogen effusion experiments on nanostructured porous silicon

Koropecki, R. R.; Arce, R.; Schmidt, Javier Alejandro

doi:10.1016/j.jnoncrysol.2004.02.044

Cited by 22 publications

(19 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…A band related to the wagging modes of Si-H bonds is observed at 630 cm -1 , and a peak corresponding to scissor modes of Si-H bonds in dihydrides can be observed at 910 cm -1 . As we demonstrated previously [3], during the first stages of photo-oxidation, oxygen atoms displace hydrogen atoms preferentially from di-hydride sites. Although the breaking energy of Si-Si bonds is lower than that of Si-H (E(Si-H))ones, molecular H 2 formation is involved in the process, as usually occurs in effusion experiments [14,15].…”

Section: Introductionsupporting

confidence: 70%

“…These characteristics, although attractive for sensing applications, lead to an unstable behaviour. Different oxidation methods [3,4] have been proposed to stabilize the luminescence and other properties of PS, and a considerable effort has been made to study the oxidation processes. FTIR spectroscopy has been one of the main techniques used to study this process.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Infrared study of the oxidation of porous silicon: evidence of surface modes

Acquaroli

Brondino

Schmidt

et al. 2009

Phys. Status Solidi (c)

View full text Add to dashboard Cite

The evolution of FTIR spectra of PS during oxidation is studied in the range 450‐1300 cm–1. We show that the small scale of the PS structure leads to a significant scattering cross section for Fröhlich surface modes associated to stretching modes in siloxane bridges. The kinetics of the evolution of both bulk‐ and surface‐related modes are studied using Principal Component Analysis. As a result, two independent components are found, one of them related to TO modes associated to silicon oxide covering large structures and the other one associated to the oxidation of a distribution of prolate ellipsoids with nanoscopic size. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Section: Introductionsupporting

confidence: 70%

Section: Introductionmentioning

confidence: 99%

Infrared study of the oxidation of porous silicon: evidence of surface modes

Acquaroli

Brondino

Schmidt

et al. 2009

Phys. Status Solidi (c)

View full text Add to dashboard Cite

show abstract

“…Search for stable bonding configuration for the porous silicon surface has been still issued to be resolved, which leads to research on different stabilization processes [15] [16].…”

Section: Introductionmentioning

confidence: 99%

“…Among many methods, thermal oxidation is one of the explored methods used in different oxidation and preparation conditions [15] [17] [18]. Though, different models have been proposed in literature to explain this behavior, but discussion is still open [15] [19].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Surface Analysis of Etched Silicon

nbsp¹,

Hussain²,

Naz³

et al. 2014

JSEMAT

View full text Add to dashboard Cite

P-type (100) oriented silicon wafers were etched with vapors of concentrated Hydrofluoric acid in a reaction chamber under continuous vapor-flow at standard temperature and pressure. The surface morphology of the etched samples was examined by scanning electron microscope and pore size analyzer. The radius of the pores and quantum dots were found to be 6 nm and 4 nm respectively. Etched samples emitted red luminescence when exposed to ultra violet (UV) light. The red luminescence emitted by the etched surface has been assigned to energy states induced by quantum confinement of holes.

show abstract

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

Chang

Tsybeskov

2010

Silicon Nanocrystals

View full text Add to dashboard Cite

IntroductionFor the past 40 years, crystalline Si (c-Si) continues to be the major material for microelectronics, and modern silicon technology is superior compared to other semiconductors (e.g., II-VI and III-V compounds). In addition to the unique electronic and structural properties of bulk c-Si, silicon dioxide (SiO 2 ) and Si/SiO 2 interfaces, single-crystal Si possesses one of the best known lattice thermal conductivity [1,2]. This exceptional heat conductance is critically important for Si device heat management and circuit reliability. However, most of the modern complementary metal-oxide-semiconductor (CMOS) platforms are no longer single-crystal Si wafers but rather thin layers of Si-on-insulator (SOI), ultrathin strained Si and SiGe heterostructures that are the foundation of SiGe bipolar transistors (HBTs), and high-mobility metal-oxide-semiconductor field-effective transistors (MOSFETs). Major properties of these Si-based nanostructures are very different from those of bulk c-Si. For example, thermal conductivity in ultrathin SOI layers, SiGe alloys, and Si/SiGe nanostructures could be reduced by more than an order of magnitude compared to that in c-Si [3-6], and heat dissipation has become an important issue for modern nanoscale electronic devices and circuits. Thus, the understanding and improvement of heat management in Si-based nanostructures is critically important for the evolution of microelectronic industry.On the other hand, many interesting applications of nanostructured Si (ns-Si) in photonic devices and CMOS-compatible light emitters were recently discussed [7][8][9][10][11]. These ns-Si materials and devices can be produced by electrochemical anodization (i.e., porous Si [12]), chemical vapor deposition (CVD) using thermal decomposition of SiH 4 [13-15], Si ion implantation into a SiO 2 matrix [16], and deposition of amorphous Si/SiO 2 layers followed by thermal crystallization [17][18][19]. These ns-Si materials and devices produce an efficient and tunable light emission in the near-infrared and visible spectral region [20,21]. Also, it has been shown that under photoexcitation with energy density >10 mJ/cm 2 , optical gain is possibly Silicon Nanocrystals: Fundamentals, Synthesis and Applications. Edited by Lorenzo Pavesi and Rasit Turan

show abstract

Infrared studies combined with hydrogen effusion experiments on nanostructured porous silicon

Cited by 22 publications

References 10 publications

Infrared study of the oxidation of porous silicon: evidence of surface modes

Infrared study of the oxidation of porous silicon: evidence of surface modes

Surface Analysis of Etched Silicon

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

Contact Info

Product

Resources

About