Infrared spectroscopic study of thin films of poly(methylsilane), its oxidation, and its transformation into poly(carbosilane) on the surfaces of silicon single-crystal wafers

Scarlete, Mihai; Brienne, Stéphane H. R.; Butler, Ian S.; Harrod, John F.

doi:10.1021/cm00043a020

Cited by 23 publications

(27 citation statements)

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“…The main absorption band located at around 795 cm − 1 for all spectra is attributed to SiC formation [22]. However, the shoulder at 1000 cm − 1 is assigned to the wagging mode of Si-CH 2 -Si [14,[23][24][25] groups, and therefore is correlated with the amount of residual hydrogen. The latter decreases considerably for the samples deposited at higher temperatures.…”

Section: Resultsmentioning

confidence: 92%

“…The most significant advantage of the PS-CVD method relies on the high deposition rate related to (a) the in situ synthesis in the reactor of the gaseous ceramic precursors with the highest known density to date (around 300 a.m.u. ), and (b) to its specific fast mechanism of synchronized SiC bonds rearrangement [13,14]. Additional advantages of the PS-CVD method are the simplicity of the equipment and handling procedures derived from the deposition at atmospheric pressure, lowering the requirements of expensive equipment imposed by classic CVD methods, and the operation with a reasonably stable precursor and reduced health hazard [12].…”

Section: Introductionmentioning

confidence: 99%

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Electrical characterization of amorphous silicon carbide thin films deposited via polymeric source chemical vapor deposition

Fanaei

Camiré²,

Aktik

et al. 2008

Thin Solid Films

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Section: Resultsmentioning

confidence: 92%

Section: Introductionmentioning

confidence: 99%

Electrical characterization of amorphous silicon carbide thin films deposited via polymeric source chemical vapor deposition

Fanaei

Camiré²,

Aktik

et al. 2008

Thin Solid Films

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“…However, there is no chemical mechanism explaining the intermediate transformations taking place during this change. FTIR spectra do not present any information about the formation of Si-CH 2 -Si vibration which normally occurs in the 1000-1100 cm -1 region of the spectra [7]. The formation of such bridge bonds can not be surely distinguisehd as the peak at 1357 cm -1 assigned to Si-CH 2 -Si structure is too weak.…”

Section: Resultsmentioning

confidence: 95%

Structural Transformation in PECVD Ultralow-k Material during Porogen Removal by UV Assisted Thermal Curing

et al. 2007

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Next-generation microelectronic interconnects require the use of dielectrics with continuously lower permittivity (k) to overcome limitations induced by crosstalk parasitic signal delay. Using PECVD, Ultralow-k film (ULK, k ≤ 2.5) can be developed by creating pore inclusions within an organosilicate matrix through porogen approach. Both ULK deposition and subsequent curing process has to be adjusted in order to achieve optimized mechanical and electrical properties and maintain stability during integration. For this concern, the attention was recently focused on ultraviolet (UV) radiation to sustain the thermal curing. In the present work, a fundamental understanding of structural transformations occurring during porogen extraction from as-deposited ULK materials when exposed to thermal-assisted UV radiation is proposed. This thermal-assisted UV cure technique is very efficient in porogen removal since in a few minutes the desired porosity is reached. During the first stage of curing, the film shrinks strongly whereas the porosity is created. After porogen removal step, the porous film continues shrinking under UV radiation leading to an increase of SiOSi bonds concentration (film densification). The normalized FTIR SiOSi peak increase during UV curing (related in literature to an improvement of mechanical properties) is mainly due to the film densification, in addition to the SiOSi bridging bond creation. In this case, correlation is found between shrinkage and elastic modulus.

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“…Even small amounts of SiAOASi will give an intense absorption at this region. 19 The characteristic SiACH 3 peak can be seen in both 1 H-NMR spectra between 0 and 0.4 ppm. In addition, there are peaks around 3 and 5 ppm corresponding to SiAH and SiAH 2 bonds in the polymer.…”

Section: The Effect Of Monomer/solvent Ratiomentioning

confidence: 97%

Electrochemical synthesis of poly(methylsilyne) and investigation of the effects of parameters on the synthesis

Eroğlu

Nur

Bayram

et al. 2010

J of Applied Polymer Sci

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This study aims to synthesize poly(methylsilyne) by electrochemical reduction of methyltrichlorosilane at a constant potential of À6 V, while investigating the effects of parameters such as the nature of the electrode, solvent and supporting electrolyte, the monomer/solvent ratio, and the reaction time on the properties of the products. The polymer was characterized by 1 H-NMR (Proton Nuclear Magnetic Resonance Spectroscopy), FTIR (Fourier Transform Infrared Spectroscopy), UV-Visible Spectroscopy, and TGA (Thermogravimetry Analysis). Copper (Cu) electrodes were used as stainless steel introduced impurities into the system. In an electrolytic media consisting of acetonitrile (AN), sodium dodecyl sulfate (SDS), and Cu electrodes, increasing the monomer/solvent ratio and the reaction time affected the system negatively based on the purity of poly (methylsilyne) in the final product. Reproducible results were only achieved in an electrolytic media containing 1,2-dimethoxyethane (DME) and tetrabutylammonium perchlorate (TBAP). In this system, the purity of the products was less dependent on monomer/solvent ratio and reaction time. The color and the 1 H-NMR, FTIR, and UV-Visible spectra proved that the product is poly(methylsilyne). In addition, the significantly high-average decomposition temperature obtained from TGA results revealed that the polymer is a good candidate as an additive for improving thermal stability and flame retardancy in thermoplastics.

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Infrared spectroscopic study of thin films of poly(methylsilane), its oxidation, and its transformation into poly(carbosilane) on the surfaces of silicon single-crystal wafers

Cited by 23 publications

References 0 publications

Electrical characterization of amorphous silicon carbide thin films deposited via polymeric source chemical vapor deposition

Electrical characterization of amorphous silicon carbide thin films deposited via polymeric source chemical vapor deposition

Structural Transformation in PECVD Ultralow-k Material during Porogen Removal by UV Assisted Thermal Curing

Electrochemical synthesis of poly(methylsilyne) and investigation of the effects of parameters on the synthesis

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