Infrared Spectra and Force Constants of Chloroform and Trichlorosilane<sup>1a,b</sup>

Gibian, T. G.; McKinney, D. S.

doi:10.1021/ja01148a009

Cited by 30 publications

(10 citation statements)

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“…The voltage applied to the halogen lamps was fixed at 80 V. Because the trichlorosilane gas absorbs a part of the infrared light emitted from the halogen lamps [9,21], the gas phase temperature, and consequently the wafer temperature, increased with the increasing trichlorosilane gas concentration. For monitoring the thermal condition, the temperature at the top of the wafer rotation shaft, TShaft ( o C), shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

“…When the epitaxial film is formed at temperatures lower than 1000 o C and at trichlorosilane gas concentrations higher than about 1%, the silicon epitaxial growth rate is determined by the rate of equation 2. Because the hydrogen concentration is nearly constant at atmospheric pressure, the epitaxial growth rate is described as a function of the wafer surface temperature, TSurface, [9,21] as follows:…”

Section: Temperature and Film Thicknessmentioning

confidence: 99%

“…Figure 7 shows the relationship between the ∆F value and the TShaft value during the epitaxial growth. As described in the Experimental section, the trichlorosilane gas absorbs a part of the infrared light [9,21] to increase the gas phase temperature in the reactor. This behavior could help to increase the wafer temperature.…”

Section: Temperature and Film Thicknessmentioning

confidence: 99%

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Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance

Muroi

Matsuo

Habuka

et al. 2018

Materials Science in Semiconductor Processing

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A silicon epitaxial growth process in a trichlorosilane-hydrogen system was evaluated using a quartz crystal microbalance (QCM) placed at the exhaust of a chemical vapor deposition reactor designed for the Minimal Fab. The QCM showed two types of the frequency decrease behaviors, that is, i) a quick shift due to the gas property change caused by the trichlorosilane gas introduction into the ambient hydrogen and ii) the continuous and gradual decrease due to the byproduct deposition on the QCM surface during the silicon epitaxial growth. Because both i) and ii) showed a relationship with the silicon epitaxial growth rate, the in-situ information obtained by the QCM was expected for the real time monitoring of the film deposition process.

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Section: Methodsmentioning

confidence: 99%

Section: Temperature and Film Thicknessmentioning

confidence: 99%

Section: Temperature and Film Thicknessmentioning

confidence: 99%

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Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance

Muroi

Matsuo

Habuka

et al. 2018

Materials Science in Semiconductor Processing

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“…Trichlorosilane has the infrared light absorption [15] at 3.3 and 2.2 μm. The halogen lamp emits the light near 1 μm, the wavelength of which widely distributes [16] to that longer than 2 μm.…”

Section: Temperature Change Caused By Trichlorosilanementioning

confidence: 99%

“…Step B. Because TCS gas absorbs the infrared light [15,16], the gas phase temperature increases and finally the wafer temperature increases. Silicon Epitaxial Reactor for Minimal Fab http://dx.doi.org/10.5772/intechopen.69986…”

Section: Epitaxymentioning

confidence: 99%

Silicon Epitaxial Reactor for Minimal Fab

Li¹,

Habuka²,

Ishida³

et al. 2018

Epitaxy

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Cost-effective and mass production of size-controlled wafers becomes one of the future trends for electronic devices. Herein, we design a Minimal Fab system for the growth of half-inch-diameter silicon wafer devices. Different from the conventional chemical vapour deposition (CVD) systems, a new-type of CVD reactor was designed and developed for the Minimal Fab. The minimal CVD reactor has a small reaction chamber for rapid growth processes. It employed (i) a vertical gas flow, (ii) heating modules using concentrated infrared light, (iii) chlorine trifluoride gas for quick reactor cleaning and (iv) optimized epitaxial growth conditions so that the reactor cleaning is not necessary. Reducing the total gas flow rate is an effective way to increase the wafer temperature. The heating process was further assisted by the absorption of infrared light by the precursor trichlorosilane. The slimly designed reflector could help in improving the heating speed.

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