Infrared single photon detector based on optical up-converter at 1550 nm

Bai, Pei Kang; Zhang, Y. H.; Shen, Wei

doi:10.1038/s41598-017-15613-0

Cited by 20 publications

(22 citation statements)

References 43 publications

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“…The noise equivalent power (NEP) is a figure of merit for photodetectors. Figure 6a, b show the calculated NEP under different bias voltages at 3.5 K for the up-conversion imaging system and single HIWIP detector, respectively 40,41 . The detailed calculation of the NEP is given in the Supplementary Note 3.…”

Section: Resultsmentioning

confidence: 99%

Broadband THz to NIR up-converter for photon-type THz imaging

et al. 2019

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High performance terahertz imaging devices have drawn wide attention due to their significant application in healthcare, security of food and medicine, and nondestructive inspection, as well as national security applications. Here we demonstrate a broadband terahertz photon-type up-conversion imaging device, operating around the liquid helium temperature, based on the gallium arsenide homojunction interfacial workfunction internal photoemission (HIWIP)-detector-LED up-converter and silicon CCD. Such an imaging device achieves broadband response in 4.2–20 THz and can absorb the normal incident light. The peak responsivity is 0.5 AW −1 . The light emitting diode leads to a 72.5% external quantum efficiency improvement compared with the one widely used in conventional up-conversion devices. A peak up-conversion efficiency of 1.14 × 10 −2 is realized and the optimal noise equivalent power is 29.1 pWHz −1/2 . The up-conversion imaging for a 1000 K blackbody pin-hole is demonstrated. This work provides a different imaging scheme in the terahertz band.

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Section: Resultsmentioning

confidence: 99%

Broadband THz to NIR up-converter for photon-type THz imaging

et al. 2019

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“…The detailed calculation of the NEP could be found in the Supplementary Materials and Refs. [15,32]. The bias voltage range start from the value of 1.4 V corresponds to the turn-on voltage of HIWIP-LED.…”

Section: Theoretical Optimization Of Ledmentioning

confidence: 99%

Optimization of the Cryogenic Light-Emitting Diodes for High-Performance Broadband Terahertz Upconversion Imaging

et al. 2021

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High-performance terahertz (THz) imaging devices have drawn wide attention due to their significant application in a variety of application fields. Recently, the upconversion device based on the integrated homo-junction interfacial workfunction internal photoemission detector and light-emitting diode (HIWIP-LED) has emerged as a promising candidate for broadband THz upconversion pixelless imaging device. In this paper, systematical investigations on the cryogenic-temperature performances of the LED part in HIWIP-LED devices, including electroluminescence (EL) spectra and the EL efficiency, have been carried out by elaborating the radiative recombination mechanism in the quantum well, internal quantum efficiency, and the light extraction efficiency (LEE) both experimentally and theoretically. On this basis, we have further studied the operation mode of the HIWIP-LED and concluded that the LEE could directly determine the upconversion efficiency. A numerical simulation has been performed to optimize the LEE. Numerical results show that the device with a micro-lens geometry structure could significantly improve the LEE of the LED thereby increasing the upconversion efficiency. An optimal upconversion efficiency value of 0.12 W/W and a minimum noise equivalent power (NEP) of 14 pW/Hz1/2 are achieved using the micro-lens structure together with anti-reflection coating. This work gives a precise description of cryogenic LED performance in the HIWIP-LED device and provides an optimization method for the broadband HIWIP-LED THz upconversion pixelless imaging device.

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“…ηgen for a single link as a function of protocol time t f . The mechanically-induced initial thermal noise in the cavity is modeled as dynamical dark counts as described in the text, while the detector dark count rate is set to 10 Hz [41]. The detection time window for each time bin T d is set to be equal to half the total detection time window: t f = 2T d .…”

Section: Fig 3 Entanglement Generation Fidelity Fgen and Efficiencymentioning

confidence: 99%

“…The loss in the channel degrades the entanglement efficiency in proportion to the square of the transmission rate, i.e., η 2 t = exp(−L 0 /L att ), which makes the efficiency curve difficult to see, so it is multiplied by this factor. We assume a dark count rate of 10 Hz and a detection efficiency of 45 %, which is predicted to be achievable for photons in the telecom band using up-conversion single photon detectors (USPDs) in the free-running regime [41] (which do not require cryogenic cooling). After taking the loss in the channel into account, this detector dark count rate is comparable to the rate D th ∼ 100 Hz.…”

Section: Fig 3 Entanglement Generation Fidelity Fgen and Efficiencymentioning

confidence: 99%

Proposal for room-temperature quantum repeaters with nitrogen-vacancy centers and optomechanics

Ji¹,

Wu²,

Wein³

et al. 2020

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We propose a quantum repeater architecture that can operate under ambient conditions. Our proposal builds on recent progress towards non-cryogenic spin-photon interfaces based on nitrogenvacancy centers, which have excellent spin coherence times even at room temperature, and optomechanics, which allows to avoid phonon-related decoherence and also allows the emitted photons to be in the telecom band. We apply the photon number decomposition method to quantify the fidelity and the efficiency of entanglement established between two remote electron spins. We describe how the entanglement can be stored in nuclear spins and extended to long distances via quasi-deterministic entanglement swapping operations involving the electron and nuclear spins. We furthermore propose schemes to achieve high-fidelity readout of the spin states at room temperature using the spin-optomechanics interface. Our work shows that long-distance quantum networks made of solid-state components that operate at room temperature are within reach of current technological capabilities.

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Infrared single photon detector based on optical up-converter at 1550 nm

Cited by 20 publications

References 43 publications

Broadband THz to NIR up-converter for photon-type THz imaging

Broadband THz to NIR up-converter for photon-type THz imaging

Optimization of the Cryogenic Light-Emitting Diodes for High-Performance Broadband Terahertz Upconversion Imaging

Proposal for room-temperature quantum repeaters with nitrogen-vacancy centers and optomechanics

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