Infrared resonance excitation of δ-layers-a silicon-based infrared quantum-well detector

Tempel, G.; Schwarz, Robert; Müller, Frank; Koch, F.; Zeindl, H.P.; Eisele, I.

doi:10.1016/0040-6090(90)90411-6

Cited by 35 publications

(10 citation statements)

References 18 publications

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“…1 Ion implantation has developed into a useful technique for fabrication of such devices as it produces buried layers with welldefined interfaces, expanding the possibility of designing novel structures. The increased density in very-large-scaleintegrated circuits also makes the technological applications of the MeV energy range increasingly important.…”

Section: Introductionmentioning

confidence: 99%

Damage studies of MeV Sb-implanted Si(100) by channeling and Raman spectroscopy

Dey

Pradhan

Varma

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted siliconThe radiation damage induced in Si͑100͒ due to 1.5 MeV Sb ions has been studied as a function of fluence using the Rutherford backscattering/channeling ͑RBS/C͒ technique and Raman spectroscopy. The damage profiles have been extracted from the RBS/C spectra and the results compared with SRIM'97 code calculations. For a fluence of 1ϫ10 14 ions/cm 2 , though the position of the damage profile is in agreement with the defect profile calculated using SRIM code, theory overestimates the damage in the surface region, suggesting dynamic self-beam annealing. The total amount of damage obtained as a function of implant dose exhibits two behaviors; a small net damage and a slow rate of damage accumulation for low fluences with a crossover to faster rates beyond a dose of 1ϫ10 13 ions/cm 2 . At this dose, a defected-amorphized zone of a critical size can form, which may easily enlarge by further accumulation of defects at higher fluences. The total damage has been compared with the results from Raman scattering and it is observed that the net damage as detected by Raman is slightly higher at the fluences where crystalline and amorphous zones coexist. The crystalline-to-amorphous ͑c/a͒ transition in Si as a function of fluence has been investigated by RBS/C and Raman scattering. The study demonstrates that Raman scattering is more effective in probing the small concentrations of defects produced during the early stages of c/a transition.

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Section: Introductionmentioning

confidence: 99%

Damage studies of MeV Sb-implanted Si(100) by channeling and Raman spectroscopy

Dey

Pradhan

Varma

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The increased density in VLSI circuits also makes the technological applications of the ion implantation, especially in MeV energy range, increasingly important. Sb is considered an important dopant because of its role in the development of field effect transistors and infrared detectors 21 . Sb has also found applications as isoelectronic dopant for trapping charge carriers in InP 22 .…”

Section: Introductionmentioning

confidence: 99%

Nano Pattern Formation and Surface Modifications by Ion Irradiation

Paramanik¹,

Majumder²,

Sahoo³

et al. 2009

DSJ

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Ion Irradiation is a technologically important technique to modify the surfaces. We have investigated the patterning of InP(111) surfaces by low energy (3 keV) as well as high energy (1.5 Mev) ion beams. After low energy ion irradiation, surfaces exhibit well defined nano dots which ripen at initial stages but exhibit fragmentations at high fluences. The surface rms, at both the energies, displays a similar behaviour of initially increasing with increasing fluences but decreasing for higher fluences. The studies show some common features at these low and high energies, like the smoothening of surface beyond the a/c transition.

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“…This has been observed in GaAs g-doped with Si [97] and in S] g-doped with Sb [98], where the absorption is between electron sub-bands, and also in Si g-doped with B [99], where hole transitions are used. These results are promising for the exploitation of g-doped layers as infrared detectors.…”

Section: Optical Propertiesmentioning

confidence: 90%

“…Although similar effects can be achieved with quantum well structures [-126], very high absorption values for Si S-doped with Sb have been reported by Tempel et al [98], who have proposed an infrared detector based on this material system. …”

Section: Lasers and Detectorsmentioning

confidence: 98%

Delta-doping of semiconductors

Harris

1993

J Mater Sci: Mater Electron

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AN INVITED REVIEWThe structural, electrical and optical properties of epitaxial semiconductor layers, delta-doped with impurity atoms, are reviewed. The majority of the discussion relates to GaAs, the moststudied material, but where possible, results for Si and other semiconductors will be presented. Although the ideal situation is one of dopant atoms confined to a single atomic plane, there are several factors, such as diffusion and segregation, which broaden the profiles, and techniques to minimize these effects are discussed. The electrostatic attraction between free carriers and ionized dopants results in a V-shaped potential well, perpendicular to the dopant plane, which confines the carriers into a quasi-two-dimensional sheet, and quantizes their energy into a series of sub-bands. This has significant consequences for the electrical and optical properties of the layers, and results of such measurements on these structures are presented. Several features of delta-doped layers are attractive for exploitation in devices, and this is illustrated by reference to a number of novel or improved device designs.

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Infrared resonance excitation of δ-layers-a silicon-based infrared quantum-well detector

Cited by 35 publications

References 18 publications

Damage studies of MeV Sb-implanted Si(100) by channeling and Raman spectroscopy

Damage studies of MeV Sb-implanted Si(100) by channeling and Raman spectroscopy

Nano Pattern Formation and Surface Modifications by Ion Irradiation

Delta-doping of semiconductors

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