Dose dependent structural modifications in Si(100) due to 1.5 MeV implantation of Sb have been characterized using Raman spectroscopy and Rutherford backscattering spectrometry/channeling (RBS/C) techniques. With increasing fluence, an intensity reduction of the first order Raman peak, characteristic of crystalline Si, is observed. The amorphicity in Si lattice appears at a dose of 1×1013 ions/cm2 and it increases with each dose. For a dose of 5×1014 ions/cm2 the Raman spectrum resembles that of amorphous Si. RBS/C studies also support a fully amorphized lattice at this dose though for smaller doses it suggests lower disorder. For the fluences of 1×1013 and 1×1014 ions/cm2 a coexistence of undamaged crystalline Si regions and amorphous zones is observed. Consequently, phonon confinement is observed. Lattice recovery achieved by subsequent annealing has also been investigated using Raman spectroscopy. By annealing at 600 °C, sample crystallinity is fully recovered in all the cases up to the fluence of 5×1014 ions/cm2. For higher doses small amorphicity still remains. Depth dependent measurements of the shifts in the Raman peaks demonstrate a gradient in stress which is of compressive nature near the surface region but is tensile in deeper layers. Maximum stress in the lattice appears for a dose of 1×1012 ions/cm2 which gets relaxed by the incorporation of amorphous zones at higher fluences.
The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted siliconThe radiation damage induced in Si͑100͒ due to 1.5 MeV Sb ions has been studied as a function of fluence using the Rutherford backscattering/channeling ͑RBS/C͒ technique and Raman spectroscopy. The damage profiles have been extracted from the RBS/C spectra and the results compared with SRIM'97 code calculations. For a fluence of 1ϫ10 14 ions/cm 2 , though the position of the damage profile is in agreement with the defect profile calculated using SRIM code, theory overestimates the damage in the surface region, suggesting dynamic self-beam annealing. The total amount of damage obtained as a function of implant dose exhibits two behaviors; a small net damage and a slow rate of damage accumulation for low fluences with a crossover to faster rates beyond a dose of 1ϫ10 13 ions/cm 2 . At this dose, a defected-amorphized zone of a critical size can form, which may easily enlarge by further accumulation of defects at higher fluences. The total damage has been compared with the results from Raman scattering and it is observed that the net damage as detected by Raman is slightly higher at the fluences where crystalline and amorphous zones coexist. The crystalline-to-amorphous ͑c/a͒ transition in Si as a function of fluence has been investigated by RBS/C and Raman scattering. The study demonstrates that Raman scattering is more effective in probing the small concentrations of defects produced during the early stages of c/a transition.
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