Infrared photoreflectance of InAs

Lin, Changqing; Singer, K. E.; Evans–Freeman, J.H.; Heath, K; Missous, M.

doi:10.1088/0268-1242/12/12/013

Cited by 13 publications

(9 citation statements)

References 18 publications

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“…We find that the sample with the highest Sb content ͑22.5%͒ has E 0 = 261± 5 meV ͑4.75 m͒, which represents the longest wavelength PR signal measured so far using grating spectroscopy. 20,21 The PR signal generally gradually decreases with increasing Sb content ͑see multiplication factors in Fig. 1͒.…”

mentioning

confidence: 95%

Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy

Cripps

Hosea

Krier

et al. 2007

Applied Physics Letters

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The authors report on midinfrared photoreflectance measurements of the band gap ͑E 0 ͒ and spin-orbit splitting energies ͑⌬ 0 ͒ in InAs-rich InAsSb and GaInAsPSb samples for varying antimony contents ഛ22.5%. The E 0 behavior as a function of Sb content is consistent with the literature value bowing parameter of ϳ670 meV. However, ⌬ 0 does not exhibit the positive bowing of +1170 meV quoted in the literature: rather, a best fit to their data tentatively suggests a negative bowing of −225 meV. This result is likely to have strong impact due to the importance of the ⌬ 0 parameter in governing InAsSb-based device performance. © 2007 American Institute of Physics. ͓DOI: 10.1063/1.2728752͔ Recent interest in developing midinfrared ͑MIR, 2-5 m͒ light emitters and detectors has been driven by the wide range of potential applications in this spectral region. 1As a result of high Auger recombination coefficients, MIR semiconductors exhibit low quantum efficiencies and devices often have to operate below room temperature.2 The Auger recombination rates are sensitive to the fundamental band gap energy E 0 and ͓in the case of the conduction, heavy-hole, spin split-off hole, heavy-hole ͑CHSH͒ process͔ the spinorbit splitting energy ⌬ 0 .3 Therefore, in order to evaluate losses by these nonradiative recombination paths, a good knowledge of both E 0 and ⌬ 0 is essential.The InAs 1−x Sb x alloy plays a particularly important role in many MIR devices. 2,4,5 As a ternary alloy it is possible to define the compositional dependence of a parameter T ͑such as E 0 or ⌬ 0 ͒ using T = xB 1 + ͑1−x͒B 2 − x͑1−x͒C, where B 1 is the binary end-point InSb value, B 2 the InAs value, and C a bowing parameter which describes any deviation from the virtual crystal approximation. 6 A range of studies of E 0 in InAs 1−x Sb x indicates that C lies between 570-690 meV [7][8][9] and the review of Vurgaftman et al. recommends using C͑E 0 ͒ = + 670 meV. 10

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confidence: 95%

Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy

Cripps

Hosea

Krier

et al. 2007

Applied Physics Letters

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“…1 Therefore, PR spectroscopy has found wide applications in characterizing materials' band structures in the last decades. [2][3][4][5] It is noteworthy, however, that up to now the studies have been mostly limited to the wide-band materials in visible and near infrared spectral regions with a wavelength shorter than 4 m. 6,7 This limitation is due mainly to the facts that ͑i͒ the source in the mid-to far-infrared spectral region produces far fewer photons than the tungsten filament lamps, and ͑ii͒ the long-wavelength photodetector, e.g., HgCdTe, is inherently less sensitive than the Si-or InGaAs-based visible-region one. The joint effect of the source and the detector makes the inefficiency of grating spectroscopy increasingly important.…”

Section: Photomodulated Infrared Spectroscopy By a Step-scan Fourier mentioning

confidence: 99%

Photomodulated infrared spectroscopy by a step-scan Fourier transform infrared spectrometer

Shao

Yue

Lü

et al. 2006

Applied Physics Letters

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“…Решеточные монохроматоры для измерений ФО традиционно используются до λ ≈ 4 µm [93,94]. Действительно, интенсивность формируемого монохроматорами зондирующего луча ограничивается узкими входными и выходными щелями, оптическим фильтром, отрезающим дифракционные максимумы более высокого порядка (λ/2, λ/3, .…”

Section: новая измерительная техника фо на основе фурье-спектрометраunclassified

“…Первые спектры ФО p-InAs были получены при помощи дифракционного спектрометра в работе [93]. Образцы выращивались методом МПЭ на InAs и GaAs подложках и легировались бериллием до концентрации (2−6) • 10 16 cm −3 .…”

Section: арсенид индия (Inas)unclassified

Инфракрасное Фотоотражение Полупроводниковых Материалов a-=sup=-3-=/Sup=-B-=sup=-5-=/Sup=- ( О Б З О Р )

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2021

Физика Твердого Тела

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Photoreflectance is a contactless type of modulation optical spectroscopy. It is used to study the band structure features of monocrystalline semiconductors, their doping level, the composition of alloys, as well as surface and interface band bending. Using high-quality GaAs as an example, the possibilities of describing the photoreflectance lineshape by one-electron and exciton models are demonstrated. The spectra of ultrapure samples of this material exhibit an oscillating structure well described by excitonic effects. For III-V alloys, a review of photoreflectance results concerning the effect of composition and temperature on the band gap and spin-orbit splitting is carried out. Determination of the position of the Fermi level on the surface (Fermi level pinning) for III-V crystals is considered. The currently developing technique for measuring photoreflectance in the mid-infrared range (photomodulation Fourier transform infrared spectroscopy) is described in detail. It is shown that phase correction plays a decisive role in such measurements. Original results demonstrate the capabilities of this method in a wide wavelength range.

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Infrared photoreflectance of InAs

Cited by 13 publications

References 18 publications

Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy

Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy

Photomodulated infrared spectroscopy by a step-scan Fourier transform infrared spectrometer

Инфракрасное Фотоотражение Полупроводниковых Материалов a-=sup=-3-=/Sup=-B-=sup=-5-=/Sup=- ( О Б З О Р )

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