Photomodulated infrared spectroscopy by a step-scan Fourier transform infrared spectrometer

Abstract

Articles you may be interested inPhotoreflectance spectroscopy with a step-scan Fourier-transform infrared spectrometer: Technique and applications Rev. Sci. Instrum. 78, 013111 (2007); 10.1063/1.2432269 Modulated photoluminescence spectroscopy with a step-scan Fourier transform infrared spectrometer Rev. Sci. Instrum. 77, 063104 (2006);

Determination of energy difference and width of minibands in GaAs/AlGaAs superlattices by using Fourier transform photoreflectance and photoluminescence

“…This problem could be solved by a direct intersubband transitions detection employing, for instance, photoluminescence in sense of the detection of the far infra− red radiation corresponding to the transition between the second and first electron subband. Such an approach has been successfully used for measuring far−infrared PL from layers [15], quantum wells [16], so far this approach has never been used in this spectral range (for the waves longer than 10 μm) for investigation of the intersubband transitions in superlattices systems. Figure 4 shows FTIR photoluminescence measured at 77 K (together with a fitting curve) for both superlattice samples in the spectral range of the intersubband transitions (radiative recombination from the second to the first elec− tron subband).…”

Arsenic-doped narrow-gap HgCdTe epilayers studied by infrared modulation spectroscopy

“…11,12 The intrinsic restriction was suffered as in the double-modulation csFTIR PL technique. 9 While the result demonstrated qualitative possibility, the spectra were recorded/depicted only in a very limited spectral range for the modulated reflectance R Δ , from which SNR could not be reliably determined, and the spectral resolution was estimated to be only about 200 cm -1 .…”

“…10 It was shown to be superior to the double-modulation csFTIR PL techniques in SNR and experimental time cost. Meanwhile, an innovative infrared PR technique was developed again based on ssFTIR spectrometer, [11][12][13] which broke down the limitation of the conventional PR techniques and overcame the difficulty of the csFTIR technique. Both the infrared modulated PL and infrared PR techniques pave an avenue for optical characterization of either photomodulation mechanisms or impurity levels and band-edge electronic structures in HgCdTe epilayers.…”

The development of HgCdTe infrared detector technology in China

“…It is highly expected to develop the modulation spectroscopy for HgCdTe material in long-wavelength infrared region. By using the Fourier Transform Infrared Spectroscopy method in step scan mode, the modulation spectroscopy in infrared has been developed for the characterization on HgCdTe material to eliminate the strong influence from the room temperature background emission [14][15][16][17] . The spectroscopy study has been done on the p-type HgCdTe material with the As or Hg vacancy doping with different measurement temperature from 10 to 300K and at different excitation laser power.…”