Infrared Optical Properties of Iridium Silicides

Wörle, D.; Grünleitner, H.; Mahlein, K.-M.; Schulz, M.

doi:10.1002/(sici)1521-396x(199805)167:1<107::aid-pssa107>3.0.co;2-3

Cited by 2 publications

(2 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1, depending on the initial thickness of the iridium layer deposited. The various IrSi phases were determined by Fourier-transform infrared (FTIR) transmission and reflection measurements [11] and by high-resolution transmission-electron microscopy (HR-TEM) [6,9]. A homogeneous a-IrSi which shows no evidence of crystalline structure in HR-TEM forms in the ultrathin range up to 4 nm silicide film thickness.…”

Section: Methodsmentioning

confidence: 99%

“…Earlier studies of IrSi films on Si reporting on the electrical [6,10], the electro-optical [6], and the optical [11] silicide properties indicate a phase difference for ultrathin (<4 nm) and thick (>8 nm) silicide layers. The electro-optical investigations using infrared internal photoemission across the interface barrier [6] indicate that the scattering parameters for charge carriers in ultrathin ( 4 nm) IrSi films deviate from those of other metallic silicides, for example c-IrSi or PtSi.…”

Section: Introductionmentioning

confidence: 98%

See 1 more Smart Citation

Resistivity of Ultrathin (0.6-3.7 nm) IrSi Films on Si(100)

Grünleitner

Semmelroth

Schulz

2001

phys. stat. sol. (a)

Self Cite

View full text Add to dashboard Cite

Subject classification: 73.30.+y; 73.50.Dn; 73.61.Jc; S1.61 Ultrathin (0.6-3.7 nm) IrSi films are fabricated by electron beam evaporation of iridium metal onto n-type silicon (100) substrates and subsequent silicide formation at 500 C. The sheet resistivity is measured at various temperatures in the range from 15 to 300 K. The polycrystalline c-IrSi films which form for a film thickness in excess of 8 nm show a metal-like behaviour of the resistivity. Ultrathin IrSi films of thickness less than 4 nm show an anomalous resistivity that increases with decreasing temperature. The exponential law observed for the resistivity is found to be consistent with hopping transport in amorphous IrSi predicted by the structure analysis for the thin films.

show abstract

Section: Methodsmentioning

confidence: 99%