Structure and electronic properties of epitaxial fluorite-type<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>IrSi</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>on Si(001)

Hörmann, U.; Remmele, T.; Klepeis, John E.; Pankratov, Oleg; Grünleitner, H.; Schulz, M.; Falke, M.; Bleloch, Andrew

doi:10.1103/physrevb.79.104116

Cited by 4 publications

(3 citation statements)

References 30 publications

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“…Similarly, the fluorite-type IrSi 2 also exhibits metallic behavior. 28 A quick comparison reveals that the experimental dI/ dV curves and the calculated DOS curves show remarkable similarities. Both have states located at about À0.55 eV, À0.13 eV, and 0.46 eV, indicating that the proposed model accurately reproduces the measured electronic properties of the system.…”

Section: Discussionmentioning

confidence: 92%

“…The local bonding environment of the Ir atom on the site C is similar to the fluorite structure of IrSi 2 , where Ir atoms form a face-centered cell and Si atoms occupy the eight interstitial tetrahedral sites (see Figure 5). 28 As depicted in Figure 5(a), the Ir atom directly binds to Si 1 , Si 2 , Si 3 , and Si 4 atoms, which form a square pyramid. In the case of Si (001) surface, we observe a similar pyramid structure with a nonplanar base formed by Si 1 , Si 2 , Si 3 , and Si 4 atoms of dimers (see Figure 5(b)), suggesting that at high Ir concentrations, it is possible to grow a fluorite-type IrSi 2 structure on the Si (001) surface.…”

Section: Resultsmentioning

confidence: 99%

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On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface

Fatima

Oğuz

Çakır

et al. 2016

Journal of Applied Physics

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Iridium (Ir) modified Silicon (Si) (001) surface is studied with Scanning Tunneling Microscopy/ Spectroscopy (STM/STS) and Density Functional Theory (DFT). A model for Ir-silicide nanowires based on STM images and ab-initio calculations is proposed. According to our model, the Ir adatom is on the top of the substrate dimer row and directly binds to the dimer atoms. I-V curves measured at 77 K shows that the nanowires are metallic. DFT calculations confirm strong metallic nature of the nanowires. Published by AIP Publishing. [http://dx

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Section: Discussionmentioning

confidence: 92%

Section: Resultsmentioning

confidence: 99%

On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface

Fatima

Oğuz

Çakır

et al. 2016

Journal of Applied Physics

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“…2 Si 24 , TaSi 225 , WSi 226 , OsSi 227 , and IrSi 228 . For many silicide compounds including PtSi (orthorhombic), NiSi (orthorhombic), and CoSi 2 (flourite), epitaxy occurs most readily on <111> substrates, though for lattice-matched fluorite structure compounds, epitaxy on <100> substrates is still possible under some preparation conditions.…”

mentioning

confidence: 99%

Thermal transport across metal silicide-silicon interfaces: An experimental comparison between epitaxial and nonepitaxial interfaces

Feser

Sridhar

et al. 2017

Phys. Rev. B

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Silicides are used extensively in nano-and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work, the thermal interface conductance of TiSi2, CoSi2, NiSi and PtSi are studied using time-domain thermoreflectance. Exploiting the fact that most silicides formed on Si(111) substrates grow epitaxially, while most silicides on Si(100) do not, we study the effect of epitaxy, and show that for a wide variety of interfaces there is no dependence of interface conductance on the detailed structure of the interface. In particular, there is no difference in the thermal interface conductance between epitaxial and non-epitaxial silicide/silicon interfaces, nor between epitaxial interfaces with different interface orientations. While these silicide-based interfaces yield the highest reported interface conductances of any known interface with silicon, none of the interfaces studied are found to operate close to the phonon radiation limit, indicating that phonon transmission coefficients are non-unity in all cases and yet remain insensitive to interfacial structure. In the case of CoSi2, a comparison is made with detailed computational models using (1) full-dispersion diffuse mismatch modeling (DMM) including the effect of near-interfacial strain, and (2) an atomistic Green' function (AGF) approach that integrates near-interface changes in the interatomic force constants obtained through density functional perturbation theory. Above 100K the AGF approach significantly underpredicts interface conductance suggesting that energy transport does not occur purely by coherent transmission of phonons, even for epitaxial interfaces. The full-dispersion DMM closely predicts the experimentally observed interface conductances for CoSi2, NiSi, and TiSi2 interfaces, while it remains an open question whether inelastic scattering, cross-interfacial electron-phonon coupling, or other mechanisms could also account for the high temperature behavior. The effect of degenerate semiconductor dopant concentration on metal-semiconductor thermal interface conductance was also investigated with the result that we have found no dependencies of the thermal interface conductances up to (n-type or p-type) ≈ 1 × 10 19 cm −3 , indicating that there is no significant direct electronic transport and no transport effects which depend on long-range metal-semiconductor band alignment.

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Effect of interface layer on growth behavior of atomic-layer-deposited Ir thin film as novel Cu diffusion barrier

Choi

Lee

et al. 2011

Applied Surface Science

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Structure and electronic properties of epitaxial fluorite-typeIrSi2on Si(001)

Cited by 4 publications

References 30 publications

On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface

On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface

Thermal transport across metal silicide-silicon interfaces: An experimental comparison between epitaxial and nonepitaxial interfaces

Effect of interface layer on growth behavior of atomic-layer-deposited Ir thin film as novel Cu diffusion barrier

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