Infrared optical characterization of GaAsAlxGa1−xAs submicron heterostructures

Durschlag, M.S.; DeTemple, T. A.

doi:10.1016/0038-1098(81)90765-1

Cited by 14 publications

(1 citation statement)

References 17 publications

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“…ω M = 1.11 × 10 4 THz and δ M = 83.3 ps −1 . Dielectric functions ε(ω) of AlGaAs are as follows [43]:…”

Section: Data Availability Statementmentioning

confidence: 99%

Metasurface Enhanced Upconversion Efficiency for High-Performance Pixel-Less Thermal Imaging

Wang,

Zhang,

Han

et al. 2023

Photonics

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High-performance infrared thermal imaging devices are widely used in military, biomedical and other fields. Upconversion pixel-less imaging is promising for infrared imaging. In this paper, we propose a hybrid metasurface to achieve high upconversion efficiency of the integrated quantum well infrared photodetector and light-emitting diodes (QWIP-LED). Systematical investigations on the performance of the QWIP-LED, including optical coupling efficiency, light extraction efficiency, and upconversion efficiency, have been carried out via theoretical simulation. We also present the integration time for different devices with different optical coupling structures. Numerical results show that 45° edge-coupled QWIP-LED is not suitable for imaging applications for the low upconversion efficiency. Traditional grating-coupled QWIP-LED can be optimized for real-time thermal imaging. The hybrid-metasurface-based QWIP-LED can achieve a high frame rate above 300 Hz due to the enhanced upconversion efficiency. This work gives a precise description of QWIP-LED performance with different device structures and opens the way for large format upconversion pixel-less imaging.

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“…ω M = 1.11 × 10 4 THz and δ M = 83.3 ps −1 . Dielectric functions ε(ω) of AlGaAs are as follows [43]:…”

Section: Data Availability Statementmentioning

confidence: 99%

Metasurface Enhanced Upconversion Efficiency for High-Performance Pixel-Less Thermal Imaging

Wang,

Zhang,

Han

et al. 2023

Photonics

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Infrared Reflectance of the GaAlAs/GaAs System

Lukeš

Humlíček

Vorlı́ček

et al. 1989

Phys. Stat. Sol. (a)

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The simple additive form of the dielectric function is used to describe the IR reflectance of the GaAlAs/GaAs system. A detailed numerical study shows a different degree of importance of the parameters involved. A reasonable correspondence is found between the experimental and model spectra; the discrepancies are, most probably due to the aluminium concentration gradient in the GaAlAs layer. The values of some important parameters (aluminium content and the plasma frequency) may be determined directly from the characteristic features of the spectra without the elaborate fitting procedure provided the layer thickness is not too small.

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Al-As-Ga (Aluminium-Arsenic-Gallium)

2006

Landolt-Börnstein - Group IV Physical Chemistry

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Infrared optical characterization of GaAsAlxGa1−xAs submicron heterostructures

Cited by 14 publications

References 17 publications

Metasurface Enhanced Upconversion Efficiency for High-Performance Pixel-Less Thermal Imaging

Metasurface Enhanced Upconversion Efficiency for High-Performance Pixel-Less Thermal Imaging

Infrared Reflectance of the GaAlAs/GaAs System

Al-As-Ga (Aluminium-Arsenic-Gallium)

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