Infrared Lattice Vibrational Spectra of AgCl, AgBr, and AgI

Bottger, G. L.; Geddes, A. L.

doi:10.1063/1.1841169

Cited by 98 publications

(11 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…6 and 7 it is clear that the static dielectric constant at low temperatures, when space-charge effects are absent, has a value in the range 6 to 8, the precise result at --60~ being 6.8+_0.2. This result agrees well with the value 7-0_+0.3 reported by Bottger and Geddes [26] from measurements on powdered samples at 27~ in the frequency range 10 s to 107 Hz but differs markedly from the results of Sathe et al [27] who give a value of 33.86 from measurements on powder samples under unspecified conditions. Presumably in this latter case space charge effects were present.…”

Section: Resultssupporting

confidence: 90%

Ionic conductivity and low frequency dispersion in hexagonal silver iodide

Cochrane

Fletcher

1971

Journal of Physics and Chemistry of Solids

View full text Add to dashboard Cite

Measurements are reported for the temperature variation of ionic conductivity in single crystals of hexagonal silver iodide. Both nominally pure and Cu 2+ doped crystals were studied and analysis of the measurements for conduction both parallel and normal to the c-axis leads to a formation energy for Frenkel defects of 0-60 eV, activation energies for diffusion of Ag + interstitials parallel and normal to the c-axis of 0.61 and 0.29 eV respectively and corresponding activation energies for Ag + vacancies of 0-50 and 0.39 eV. Similar measurements performed on thin films of AgI grown expitaxially on mica show varying behaviour but the activation energy for conduction is about 0.4 eV, which agrees with the value expected from the single-crystal results if the conductivity is vacancy controlled. Dielectric measurements in the frequency range 10-10~Hz at temperatures between 193 and 340~ show anomalous dispersion peaks at about 104 Hz for temperatures above 300~ which are tentatively interpreted in terms of trapped Frenkel defects and interfacial polarization. At temperatures below about 290"K a series of sharp resonant absorptions is observed whose origin is uncertain. The static dielectric constant approaches the value 6.8 +-0.2 at temperatures below-40~ * Based on a thesis submitted by G. Cochrane for the Ph.D. degree of the University of New England.

show abstract

Section: Resultssupporting

confidence: 90%

Ionic conductivity and low frequency dispersion in hexagonal silver iodide

Cochrane

Fletcher

1971

Journal of Physics and Chemistry of Solids

View full text Add to dashboard Cite

show abstract

“…The basic theoretical principles for this structural analysis of thin films can be found in articles published in the 1960's. [10][11][12] It has been amply reported that only transverse vibrational modes can be detected for thin films when the IR absorption spectra are recorded at normal incidence of the radiation. Under these conditions, the electric field vector of the radiation is parallel to the substrate surface.…”

Section: Resultsmentioning

confidence: 99%

“…In particular, it is well known that IR spectra of a film contain information not only on the crystalline structure, but also on the orientation of the crystallographic axes with respect to the film surface. [10][11][12][13] …”

Section: Introductionmentioning

confidence: 99%

Iron oxide thin films prepared by ion beam induced chemical vapor deposition: Structural characterization by infrared spectroscopy

Yubero¹,

Ocaña²,

Justo³

et al. 2000

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

ions, while a volatile precursor of iron ͓i.e., Fe͑CO͒ 5 ] is dosed onto the substrate surface. In the latter case, Ar atoms are incorporated within the iron oxide lattice. Atomic force microscopy, Rutherford backscattering spectroscopy, and x-ray photoelectron spectroscopy were utilized to characterize the films' surface morphology, stoichiometry and chemical state. The film structure has been analyzed by grazing angle x-ray diffraction ͑XRD͒ and infrared spectroscopies. In particular, infrared spectroscopy has permitted a thorough structural characterization of the films, even in the cases where XRD does not provide information about the structure. Thus, when O 2 ϩ ions are used for the synthesis, iron oxide thin films grow with a hematite structure with the c axis of the crystallites perpendicular to the film surface. However, when an Ar ϩ /O 2 ϩ ion mixture is used, the thin films have a hematite structure with the c axis of the crystallites oriented parallel to the film surface.

show abstract

“…Fourier transform infrared spectroscopy (FTIR) spectroscopy can be used as a complement of XRD for a more accurate description of the structure of ZrO 2 thin films. Although FTIR is normally used on a ''fingerprint'' basis, a systematic analysis of IR spectra may also provide insight into the ZrO 2 thin film structure [25][26][27][28][29]. Fig.…”

Section: Chemical Compositionmentioning

confidence: 99%

Structural effects due to the incorporation of Ar atoms in the lattice of ZrO2 thin films prepared by ion beam assisted deposition

Holgado¹,

Galindo²,

Veen³

et al. 2002

Nuclear Instruments and Methods in Physics Research Section B:

View full text Add to dashboard Cite

Two sets of ZrO 2 thin films have been prepared at room temperature by ion beam induced chemical vapour deposition and subsequently annealed up to 1323 K. The two sets of samples have been prepared by using either O þ 2 or mixtures of (O þ 2 þ Ar þ ) ions for the decomposition of a volatile metallorganic precursor of zirconium. The structure and microstructure of these two sets of samples have been determined by means of X-ray diffraction, Fourier transform infrared spectroscopy and positron beam analysis (PBA). The samples were very compact and dense and had a very low-surface roughness. After annealing in air at T P 573 K both sets of films were transparent and showed similar refraction indexes.For the (O þ 2 þ Ar þ )-ZrO 2 thin films it is shown by X-ray photoelectron spectroscopy and Rutherford back scattering that a certain amount of incorporated Ar (5-6 at.%) remains incorporated within the oxide lattice. No changes were detected in the amount of incorporated Ar even after annealing at T ¼ 773 K. For higher annealing temperatures (T > 1073 K), the amount of Ar starts to decrease, and at T ¼ 1223 K only residual amounts of Ar (<0.4%) remain within the lattice. It has been found that as far as Ar atoms remain incorporated within the ZrO 2 network, the (O þ 2 -Ar þ )-ZrO 2 films present a cubic/tetragonal phase. When the amount of ''embedded'' Ar decreases, the crystalline phase reverts to monoclinic, the majority phase observed for the (O The incorporation of Ar within the ZrO 2 thin film structure, is proposed as the main factor contributing to the stabilisation of the cubic/tetragonal phase of ZrO 2 at room temperature.

show abstract

Infrared Lattice Vibrational Spectra of AgCl, AgBr, and AgI

Cited by 98 publications

References 34 publications

Ionic conductivity and low frequency dispersion in hexagonal silver iodide

Ionic conductivity and low frequency dispersion in hexagonal silver iodide

Iron oxide thin films prepared by ion beam induced chemical vapor deposition: Structural characterization by infrared spectroscopy

Structural effects due to the incorporation of Ar atoms in the lattice of ZrO2 thin films prepared by ion beam assisted deposition

Contact Info

Product

Resources

About