1969
DOI: 10.1364/josa.59.001233
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Infrared Emission from Free Carriers in Germanium*

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Cited by 3 publications
(1 citation statement)
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“…Optical properties such as absorption cross-section and skin depth determine the amount of heat absorbed and the depth of the optical penetration [ 23 ] at the incident surface. In electronic materials such as silicon and germanium, the generation of photocarriers through a photon–electron interaction can also contribute to the thermal response through nonradiative relaxation to the ground state [ 24 ]. The associated temperature increase results in surface emission.…”
Section: Introductionmentioning
confidence: 99%
“…Optical properties such as absorption cross-section and skin depth determine the amount of heat absorbed and the depth of the optical penetration [ 23 ] at the incident surface. In electronic materials such as silicon and germanium, the generation of photocarriers through a photon–electron interaction can also contribute to the thermal response through nonradiative relaxation to the ground state [ 24 ]. The associated temperature increase results in surface emission.…”
Section: Introductionmentioning
confidence: 99%