Infrared Cyclotron Resonance and Related Experiments in the Conduction Band of InSb

Johnson, E. J.; Dickey, D. H.

doi:10.1103/physrevb.1.2676

Cited by 157 publications

(21 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…This is a value larger than the effective mass at the band edge of InSb, m ‫ء‬ = 0.0139m 0 . 5 The enhancement is due to the nonparabolicity of the band structure of InSb. The effective mass of the first subband level is already slightly enhanced due to its elevated energy value with respect to the band edge.…”

Section: Experimental Investigationsmentioning

confidence: 99%

Terahertz photoresponse of AlInSb/InSb/AlInSb quantum well structures

et al. 2010

View full text Add to dashboard Cite

We have studied the photoresponse ͑transmission and photoconductivity of Corbino-shaped devices͒ of structures with InSb quantum wells ͑AlInSb barriers͒. To characterize the devices, the Shubnikov-de Haas ͑SdH͒ effect up to magnetic fields B of 7 T and current-voltage ͑I-V͒ characteristics at various magnetic fields were measured. Some of the samples showed clearly resolvable SdH oscillations. The I-V curves showed pronounced nonlinearities. The phototransmission and the photoconductivity at various terahertz ͑THz͒ frequencies were measured around 2.5 THz generated by a p-Ge laser. From the cyclotron resonance ͑transmis-sion measurements͒ we deduced a cyclotron mass of 0.022m 0 . We also performed photoconductivity measurements on Corbino-shaped devices in the THz frequency range. Oscillations of the photoconductivity with maxima near the minima of the conductivity in the dark were observed. Thus, these devices are potentially suitable for the detection of THz radiation.

show abstract

Section: Experimental Investigationsmentioning

confidence: 99%

Terahertz photoresponse of AlInSb/InSb/AlInSb quantum well structures

et al. 2010

View full text Add to dashboard Cite

show abstract

“…a) a--spectrum: (1) a+(-1) aC(0), (2) (8) b72) bC(3), (9) a+(l) ac(2), (10) ~( 3 ) ac(4), (11) b-(3) bc(4), (12) b+(l) bC(2), (13) a74) aC(5), (14) b34) bc(5), (15) a+(2) aC(3), (16) a75) ac(6), (17) b35) bC(6), (18) b+(2) bc(3), (19) a 7 6 ) ac(7), 20) b 7 6 ) bC(7), (21) and further not shown. b) d-spectrum: (2), (9) a 3 4 ) aC(3),(10) b-(4) bc(3), (11) a'(2) aC(l), (12) a 7 5 ) aC(4), (13) b-(5) bc(4), (14) b+(2) bC(l), (15)a-(6) aC(5), (16) b-(6) bc(5), (17) a+(3) aC(2), (18) a 7 7 ) aC(6), (19) b37) bc(6), (20) b+(3) bc(2), (21) a38) ac(7), (22) b38) bC(7), (23) and further, not shown As could be anticipated, the spectra of the crystals in which the Wannier-Mott exciton was observed in the ground state even a t H = 0, exhibit a pronounced fine structure which not only provides a sound basis for more accurate quantitative data treatment, but also makes it possible to detect new features not observed before. Among them is the peculiar structure of the first lines in the spectrum including, besides transitions to the ground state (the DE "Coulomb" quantum number v = 0) and the first excited state (v = 1) also a broad absorption tail in the exciton continuum a t photon energies above the DE dissociation limit, hw > e Y = = , upon which a nearly equidistant peak structure is superimposed.…”

Section: Methodsmentioning

confidence: 99%

Diamagnetic excitons and the indium antimonide energy band parameters

Éfros

Kanskaya

Kokhanovskii

et al. 1982

Physica Status Solidi (b)

View full text Add to dashboard Cite

The oscillatory absorption edge spectrum of InSb crystals exhibiting the discrete structure of the Wannier-Mott exciton a t H = 0 is studied a t 1.8 K in magnetic fields of up to 80 kOe.The experimental data obtained are analyzed with a computer taking into account the excitonic nature of the phenomenon and the effect on the Landau levels of the nonlocality of potential resulting from the electron4ectron exchange interaction. A set of band parameters i s presented which provides a minimum discrepancy between the theoretical and experimental spectra of not more than 0.65 meV per datum point: E,=23.42 eV, F = -

show abstract

“…In earlier experiments 6 we have shown that absorption lines involving (1) LO-phonon-assisted cyclotron resonance (LOCR) and (2) harmonics of cyclotron resonance (HCR) occur in significant strength in InSb. Here we examine these transitions in the two-phonon region.…”

Section: Netoabsorptionmentioning

confidence: 99%

Two-Phonon Deformation Potential in InSb

Ngai

Johnson

1972

Phys. Rev. Lett.

Self Cite

View full text Add to dashboard Cite

The nonpolar optic two-phonon deformation potential is shown to have observable effects on the electronic spectrum. Its value is deduced for InSb.The nonpolar interaction Hamiltonian between carriers and phonons can be expanded in powers of the lattice displacement,The first-order term u* VU (=# e/) (1) ) gives rise to the familiar one-phonon scattering. The higher-order terms correspond to multiphonon scattering in which two or more phonons are created and/or destroyed. It has been suggested 1 * 2 that the term bilinear in the acoustic phonon amplitudes, # e / 2 \ may account for the temperature dependence of mobility in nonpolar semiconductors. However, two-phonon scattering can also arise from the second-order matrix element of H ep (1 \ As described by Herring, 3 most of the acoustic scattering matrix element of # e/>(2) will be canceled by the second-order matrix elements oiH eP^\ This cancelation of terms in the transport formulation has made it difficult to draw any conclusions from transport data concerning the importance of the bilinear acoustic term, H eP^2 \ 3 Similarly, both contributions must be considered simultaneously in lattice dynamical calculations. There one must include H eP (2) in the electronic contribution to the force constants in order to preserve the translational invariance of the free energy. Only then will all acoustic-mode frequencies vanish at long wavelengths. 4In contrast, the effect of # e / 2) for nonpolar optical (NPO) phonons can be isolated for the following reasons: (1) Optical phonons have finite frequencies as q-~0; (2) for electrons in a band of s-like symmetry, the first-order NPO matrix element ofH eP (l) vanishes; and (3) experiments involving resonant electron-phonon(s) interaction can be used. Each of these factors will prohibit interference between matrix elements oiH eP^ and H eP i2 \ In this Letter we report some magneto-optical observations of the effects ofH eP (2) for NPO phonons and present the first determination of the two-phonon deformation potential in InSb. Our magneto-optical studies oiH eP {2) are not hampered by the complications involved in the analysis oiH eP {2) (acoustic) in transport data.Magnetotransmission measurements were made on a 1.87-mm-thick Te-doped InSb sample (n = 1.4xl0 15 cm" 3 , |U=3xl0 15 cm/V sec at 77°K). Most samples were oriented with the magnetic field B in the (110) direction and the light propagation vector perpendicular to B. The sample temperature was 6°K and in the magnetic fields of interest, carriers freeze out so that impurity transitions predominate. The infrared energy range covered was from 33 to 55 meV, the twooptical-phonon region. Part of the two-phonon absorption spectrum for B = 0 is shown in Fig. 1. The present data show more structure than similar data which was reported previously. 5 In the presence of a magnetic field, induced absorption appeared which corresponds to a 10-15% modification of zero-field data. The induced absorption was isolated and the structure in the resulting spectrum was attributed to...

show abstract

Infrared Cyclotron Resonance and Related Experiments in the Conduction Band of InSb

Cited by 157 publications

References 34 publications

Terahertz photoresponse of AlInSb/InSb/AlInSb quantum well structures

Terahertz photoresponse of AlInSb/InSb/AlInSb quantum well structures

Diamagnetic excitons and the indium antimonide energy band parameters

Two-Phonon Deformation Potential in InSb

Contact Info

Product

Resources

About