Infrared Absorption Spectra of C Local Mode in Si_1-x-yGe_xC_y Crystals

Abstract

The local vibration mode of substitutional C atoms (C-LVM) in high-quality Si1-x-y Ge x C y crystals was studied by infrared absorption spectroscopy. The peak intensity and full width at half maximum of C-LVM were found to change depending on Ge content as well as substitutional C content. However, the integrated intensity of C-LVM exhibited a linear dependence on the substitutional C content. These results demonstrate that the effective charge of substitutional C atoms in Si1-x-y Ge x C y crystals is independent of their atomic configurations. Moreover, the present results clearly indicate that the substitutional C content can be estimated from the integrated intensity of C-LVM.

Influence of Carbon in In-situ Carbon-Doped SiGe Films on Si(001) Substrates on Epitaxial Growth Characteristics

“…10,11) The other issue is that C atoms are incorporated not only in the substitutional but also in the interstitial sites because of its relatively low solubility in SiGe. [12][13][14][15] Until now, SiGe:C are grown on Si(001) using molecular beam epitaxy (MBE), [16][17][18][19] and chemical vapor deposition (CVD) [10][11][12]14) method, and analyzed the amount of interstitial and substitutional C. In CVD, the precursors for C are SiH 3 CH 3 , [10][11][12]14) or C 2 H 4 . 20) Substitutional C concentration was characterized by other method as infrared absorption spectroscopy.…”

“…20) Substitutional C concentration was characterized by other method as infrared absorption spectroscopy. 13) References 19, 21, and 22 reported that a number of Ge-C bonds in SiGe:C would be very small or not formation by Raman spectroscopy or Monte Carlo studies. As described above, sites of C have be interested and researched.…”