Infrared absorption of thin films deposited from tetraethylgermanium in r.f. glow discharges

Gazicki, M.; Szymanowski, H.; Schalko, J.; Malinovský, Ľ.

doi:10.1016/0040-6090(93)90495-b

Cited by 6 publications

(4 citation statements)

References 13 publications

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“…As seen in Fig. As a matter of fact, the 5 W spectrum is quite similar to that of the precursor compound, tetraethylgermanium, 6 whereas the 100 W spectrum is almost identical with the spectrum of germanium/carbon film rf plasma deposited from GeH 4 /C 2 H 4 mixture and presented by Catherine and Turban. An inspection of this Fig.…”

Section: Discussionsupporting

confidence: 58%

“…Materials of radically different structure and properties are formed from tetramethylgermanium 1-4 and tetraethylgermanium [5][6][7][8] depending on the energetic conditions of the plasma. Materials of radically different structure and properties are formed from tetramethylgermanium 1-4 and tetraethylgermanium [5][6][7][8] depending on the energetic conditions of the plasma.…”

Section: Introductionmentioning

confidence: 99%

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Correlation between gas phase composition of rf plasma of argon diluted tetraethylgermanium and chemical structure of therewith deposited Ge/C films

Gazicki

Szymanowski

Tyczkowski

et al. 1996

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inMechanism of selective SiO2/Si etching with fluorocarbon gases (CF4, C4F8) and hydrogen mixture in electron cyclotron resonance plasma etching system Effect of gas composition and bias voltage on the structure and properties of aC:H/SiO2 nanocomposite thin films prepared by plasmaenhanced chemicalvapor deposition Gasphase composition measurements during chlorine assisted chemical vapor deposition of diamond: A molecular beam mass spectrometric study Quadrupole mass spectrometry ͑QMS͒ and optical emission spectroscopy ͑OES͒ have been applied to the characterization of rf plasma of tetraethylgermanium-argon mixture. QMS analysis shows that under low power input conditions, when organogermanium plasma polymer films are deposited, the gas phase consists primarily of monomer molecules and their largest fragments. In contrast, at high power input, under conditions of hydrogenated germanium/carbon alloy film formation, tetraethylgermanium undergoes nearly complete fragmentation forming atomic germanium, atomic and molecular hydrogen, and a number of hydrocarbon species. A dramatic increase of molecular hydrogen concentration with the increasing rf power is confirmed by OES actinometric measurements. Strong dependence of atomic hydrogen concentration in the gas phase on rf power supports the concept of the formation of Ge-H bonding in the films via saturation of germanium dangling bond with hydrogen and, therefore, provides an argument to the hypothesis of a competition between Ge-H and Ge-O bond formation.

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Section: Discussionsupporting

confidence: 58%

Section: Introductionmentioning

confidence: 99%

Correlation between gas phase composition of rf plasma of argon diluted tetraethylgermanium and chemical structure of therewith deposited Ge/C films

Gazicki

Szymanowski

Tyczkowski

et al. 1996

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

Self Cite

View full text Add to dashboard Cite

show abstract

“…The transition between the dielectric and semiconducting properties occurs as the preparation conditions for these materials change [1][2][3][4][5]. One such transition is described in recent studies of germanium:carbon films prepared by plasma deposition from alklylated germanes [6][7][8][9][10][11][12][13][14][15]. Gazicki and his coworkers [10][11][12][13][14][15] correlated the stoichiometry and bulk electrical properties of films deposited from tetraethylgermanium plasma with radio-frequency power levels.…”

Section: Introductionmentioning

confidence: 99%

“…One such transition is described in recent studies of germanium:carbon films prepared by plasma deposition from alklylated germanes [6][7][8][9][10][11][12][13][14][15]. Gazicki and his coworkers [10][11][12][13][14][15] correlated the stoichiometry and bulk electrical properties of films deposited from tetraethylgermanium plasma with radio-frequency power levels. They link the transition from dielectric to semiconducting films to changes in the composition of the plasma.…”

Section: Introductionmentioning

confidence: 99%

Ionization of tetraethylgermanium,

Jiao¹,

Garscadden²,

DeJoseph³

et al. 1999

J. Phys. B: At. Mol. Opt. Phys.

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The ion chemistry in tetraethylgermanium has been examined by Fourier-transform mass spectrometry under single-collision conditions in the pressure range. The cross sections for electron impact ionization of are measured from threshold to 70 eV. The molecular ion and 15 fragment ions from the electron-molecule collision are observed with a total cross section of at 70 eV. All fragment ions, except , are found to react readily with to yield , with rate coefficients in the range of 2-. Small yields of digermanium cluster ions are observed at higher reactant pressures.

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Chemical bonding in thin Ge/C films deposited from tetraethylgermanium in an r.f. glow discharge—an FTIR study

et al. 1995

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Infrared absorption of thin films deposited from tetraethylgermanium in r.f. glow discharges

Cited by 6 publications

References 13 publications

Correlation between gas phase composition of rf plasma of argon diluted tetraethylgermanium and chemical structure of therewith deposited Ge/C films

Correlation between gas phase composition of rf plasma of argon diluted tetraethylgermanium and chemical structure of therewith deposited Ge/C films

Ionization of tetraethylgermanium,

Chemical bonding in thin Ge/C films deposited from tetraethylgermanium in an r.f. glow discharge—an FTIR study

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