Infra‐red thermal measurement on a low‐power infra‐red emitter in CMOS technology

Pandey, Prakash; Oxley, C. H.; Hopper, Richard; Ali, Zeeshan; Duffy, Alistair

doi:10.1049/iet-smt.2018.5427

Cited by 4 publications

(9 citation statements)

References 12 publications

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“…For this method, the temperature dependent resistance of the micro-heater was measured, taking into account the chip track resistance. Knowing the temperature coefficients of resistance ( 1 = 1.88 × 10 -3 K -1 and 2 = 4.6 × -7 K -2 provided by ams Sensors UK Ltd.); the average temperature of the IR source chip was calculated [13], using Equation 5.…”

Section: High Temperature Measurement Resultsmentioning

confidence: 99%

“…The IR detector is a LN2 cooled 512 × 512 pixel indium antimony (InSb) focal plane array with a maximum thermal spatial resolution of ~ 3 µm (using a 25 × objective), giving a field-of-view of 464 µm × 464 µm [20]. The IR thermal measurement approach has already been described in [13], [21]. An optical lens was included in the lens turret, enabling switching between IR and visible objectives.…”

Section: Methodsmentioning

confidence: 99%

“…The metal micro-particles were placed in isothermal contact with the surface of the microheater (as shown in Fig. 4) using a Scientifica micro-manipulation probe [13]. Naturally occurring electrostatic and Van-der-Waals forces help to adhere the metal micro-particle to the micromanipulation probe, enabling the single micro-particle to be transferred to the measurement point on the surface of the micro-heater.…”

Section: Thermal-incandescence Calibrationmentioning

confidence: 99%

“…This effect is noticeable when hot objects start to visibly glow at temperatures approximately 798 K (known as the Draper point) [12]. At lower temperatures, optical emission due to thermal-incandescence is too weak to be easily detected but thermally emitted radiation in the mid-IR waveband can be detected, for example, using IR microscopy [13].…”

Section: Introductionmentioning

confidence: 99%

“…It is important to maximize thermal uniformity across the micro-heater to ensure consistent IR emission and to minimize the localized hotspots, which could induce thermal stress leading to premature failure. IR thermal microscopy has been used to thermally characterize the temperature distribution on the IR source [13], which showed excellent thermal uniformity to temperatures approaching 700 °C. To enable thermal characterization of the IR source, at elevated temperature (> 700 °C), a passive optical approach will be presented in which, uniform thermally emitted incandescent radiation is used.…”

Section: Introductionmentioning

confidence: 99%

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High temperature characterization of a CMOS based infra-red source using thermal-incandescence microscopy

Pandey

Oxley

Hopper

et al. 2020

Solid-State Electronics

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This paper presents the high temperature thermal characterization of a Micro-Electro-Mechanical Systems (MEMS) infra-red (IR) thermal source, using non-contact optical approaches, based on IR and thermo-incandescence microscopy. The IR thermal source was fabricated using a CMOS based processing technology and consists of a miniature micro-heater, fabricated using tungsten metallization. The performance and reliability of the IR source is highly dependent on its operating temperature. For short-wave (1.4 µm -2.5 µm) infra-red emission, the operating temperature is in excess of 800°C. Work will be presented in this paper in which spot temperature measurements (> 700 °C) were made on the IR source using thermal-incandescence microscopy. Thermal-optical calibration was achieved by utilizing the known melting point (MP) of different metal microparticles. Optical measurements were compared to those obtained using an electrical approach. The thermal measurements suggest good temperature uniformity across the micro-heater of the IR source.

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Section: High Temperature Measurement Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Thermal-incandescence Calibrationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High temperature characterization of a CMOS based infra-red source using thermal-incandescence microscopy

Pandey

Oxley

Hopper

et al. 2020

Solid-State Electronics

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Cumulative Impacts of Proton Irradiation on the Self-heating of AlGaN/GaN HEMTs

Chatterjee

Shoemaker

Song

et al. 2020

ACS Appl. Electron. Mater.

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The impact of proton irradiation on the self-heating of AlGaN/GaN high-electron-mobility transistors (HEMTs) was studied at an energy of 1 MeV and under a fluence level of 2 × 1015 cm–2. Severe degradation in electrical characteristics was observed under these conditions (5× reduction in drain saturation current at V GS = 0 V, positive shift in threshold voltage by 3.1 V). Concomitantly, an 80% increase in the device gate temperature was observed using a thermoreflectance thermal imaging technique, at a power dissipation level of 5 W/mm. One of the key contributing factors behind this exacerbated self-heating for the irradiated devices was found to be the increased electric field concentration at the drain side of the gate edge because of a higher drain–source voltage level required to operate the device at the same power density condition before irradiation. Additionally, reduction in thermal conductivity of the gallium nitride (GaN) layer and the silicon (Si) substrate led to increased thermal resistance and, hence, an increased device operating temperature. According to the stopping and range of ions in matter (SRIM) simulation, the penetration depth for the protons was ∼8.8 μm under the tested conditions. As the GaN/Si interface structure (including the AlGaN strain-relief layer) for the tested HEMTs was about 5 μm away from the surface, significant damage occurred near this heterointerface. This damage resulted in an ∼3× increase in the effective interfacial thermal boundary resistance that contributed to an additional 16% increase in device self-heating. Overall, the degradation of electrical parameters (24%), the GaN thermal conductivity (33%), the GaN/Si effective thermal boundary conductance (16%), and the Si substrate thermal conductivity (20%) contributed to the exacerbated self-heating in the irradiated AlGaN/GaN HEMT (∼90 °C) as compared to that of the reference (i.e., nonradiated) HEMT (∼50 °C), under a power density condition of 5 W/mm.

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Detection of Unusual Thermal Activities in a Semiconductor Chip Using Backside Infrared Thermal Imaging

Salvi

Jain

2021

Journal of Electronic Packaging

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Rapid detection of hardware Trojans on a semiconductor chip that may run malicious processes on the chip is a critical and ongoing security need. Several approaches have been investigated in the past for hardware Trojan detection, mostly based on changes in circuit parameters due to Trojan activity. Chip temperature is one such parameter that is closely related to the degree of Trojan activity. This paper carries out backside infrared imaging of a two-die three-dimensional integrated circuit (3D IC) thermal test chip in order to detect unusual thermal activities on the chip. Four distinct image processing algorithms are evaluated and compared in terms of speed, accuracy and occurrence of false positives and negatives. The impact of background thermal activity and finite duration of Trojan activity on the accuracy of detection is investigated. Within the parameter space tested in this work, the histogram method is found to be the most effective at Trojan detection in the 3D IC. Modifications in data analysis techniques are proposed that improve Trojan detection performance. This work may help develop thermal imaging as a means for real-time Trojan detection and enhancement of security of modern semiconductor chips, including 3D ICs.

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Infra‐red thermal measurement on a low‐power infra‐red emitter in CMOS technology

Cited by 4 publications

References 12 publications

High temperature characterization of a CMOS based infra-red source using thermal-incandescence microscopy

High temperature characterization of a CMOS based infra-red source using thermal-incandescence microscopy

Cumulative Impacts of Proton Irradiation on the Self-heating of AlGaN/GaN HEMTs

Detection of Unusual Thermal Activities in a Semiconductor Chip Using Backside Infrared Thermal Imaging

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