We report on the development of highly reflective back contacts made of multi-layer stacks for ultrathin CIGS solar cells. Two architectures are compared: they are made of a silver mirror coated either with a single layer of In2O3:Sn (ITO) or with a bilayer of ZnO:Al/ITO. Due to the improvement of CIGS rear reflectance, both back contacts result in a significant EQE enhancement, in agreement with optical simulations. However, solar cells fabricated with Ag/ITO back contacts exhibit a strong shunting behavior. The key role of the ZnO:Al layer to control the morphology of the top ITO layer and to avoid silver diffusion through the back contact is highlighted. For a 500 nmthick CIGS layer, this optimized reflective back contact leads to a best cell with a short-circuit current of 27.8 mA/cm² (+2.2 mA/cm² as compared to a Mo back contact) and a 12.2%efficiency (+2.5% absolute).