Influencing factors of SiGe heterojunction bipolar transistor singleevent effect in laser microbeam simulation test

Laser-Induced Single Event Transients in Local Oxidation of Silicon and Deep Trench Isolation Silicon-Germanium Heterojunction Bipolar Transistors

“…Because of its nondestructive nature and accurate po-sitioning, the laser microbeam is a simple and convenient method in SEE studies, which can focus into small beam size, capable of scanning sensitive junctions of devices. [15,16] In this Letter, we present a comprehensive investigation on the SET in local oxidation of silicon (LO-COS) and DTI SiGe HBTs by means of pulsed laser microbeam. Measurement results show that LOCOS SiGe HBTs are more sensitive than DTI SiGe HBTs in the SET.…”