Influences of hydrogen dilution on the growth of Si-based core–shell nanowires by HWCVD, and their structure and optical properties

Hamzan, Najwa binti; Al-Masoodi, Ahmed Hasan Hamood; Rahman, Saadah Abdul; Goh, Boon Tong

doi:10.1007/s00339-016-9794-3

Cited by 6 publications

(3 citation statements)

References 40 publications

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“…Figure 6 e shows a typical Si 2p peak of the core-shell nanowires containing of SiC (25.7%) and SiO x (41.4%). This oxidation states are possibly ascribed to the formation of amorphous SiO x layer on the nanowires due to the oxidation after the nanowires were exposed to the atmospheric ambient [ 33 ]. On the other hand, a little amount of Ni was observed in Ni 3s as shown in Figure 6 f owing to the less sensitivity of the photoelectron energy channels to Ni element.…”

Section: Resultsmentioning

confidence: 99%

Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition

et al. 2019

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This work demonstrated a growth of well-aligned NiSi/SiC core-shell nanowires by a one-step process of hot-wire chemical vapor deposition on Ni-coated crystal silicon substrates at different thicknesses. The NiSi nanoparticles (60 to 207 nm) acted as nano-templates to initially inducing the growth of these core-shell nanowires. These core-shell nanowires were structured by single crystalline NiSi and amorphous SiC as the cores and shells of the nanowires, respectively. It is proposed that the precipitation of the NiSi/SiC are followed according to the nucleation limited silicide reaction and the surface-migration respectively for these core-shell nanowires. The electrical performance of the grown NiSi/SiC core-shell nanowires was characterized by the conducting AFM and it is found that the measured conductivities of the nanowires were higher than the reported works that might be enhanced by SiC shell layer on NiSi nanowires. The high conductivity of NiSi/SiC core-shell nanowires could potentially improve the electrical performance of the nanowires-based devices for harsh environment applications such as field effect transistors, field emitters, space sensors, and electrochemical devices.

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Section: Resultsmentioning

confidence: 99%

Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition

et al. 2019

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“…Other common technique, chemical vapor deposition (CVD) is a technique for deposition nanostructured thin film on substrates with very high temperature using precursor gases [22]. Insertion of hot-filament in to the CVD technique helps to deposit nanocrystalline of nanostructured thin film at lower substrate temperature as hot-filament chemical vapor deposition (HFCVD) technique [18,[23][24][25][26][27]. The HFCVD process employs the heated filament to decompose Deposition of Silver Nanoparticles on Indium Tin Oxide Substrates by Plasma-Assisted Hot… DOI: http://dx.doi.org /10.5772/intechopen.94456 the precursor species and deposit nanostructured film on the substrate.…”

Section: Plasma-assisted Hot-filament Evaporationmentioning

confidence: 99%

“…The high reaction temperatures usually lead to the destruction of the device layers during the deposition process [13,15,16]. This issue can be avoided using thermal evaporation by hot-filament, as it provides a rapid evaporation of metallic nanoparticles source in high purity and the most important is it involving low substrate temperatures (usually below 400°C) [17,18]. Moreover, plasma-driven deposition controls the transportation and deposition of the evaporated metallic adatoms, which directly leads to better size and uniformity of the deposition [19].…”

Section: Introductionmentioning

confidence: 99%

Deposition of Silver Nanoparticles on Indium Tin Oxide Substrates by Plasma-Assisted Hot-Filament Evaporation

Goh¹,

Al-Masoodi²,

Majid³

2021

Thin Films

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Nanoparticles of noble metals have unique properties including large surface energies, surface plasmon excitation, quantum confinement effect, and high electron accumulation. Among these nanoparticles, silver (Ag) nanoparticles have strong responses in visible light region due to its high plasmon excitation. These unique properties depend on the size, shape, interparticle separation and surrounded medium of Ag nanoparticles. Indium tin oxide (ITO) is widely used as an electrode for flat panel devices in such as electronic, optoelectronic and sensing applications. Nowadays, Ag nanoparticles were deposited on ITO to improve their optical and electrical properties. Plasma-assisted hot-filament evaporation (PAHFE) technique produced high-density of crystalline Ag nanoparticles with controlling in the size and distribution on ITO surface. In this chapter, we will discuss about the PAHFE technique for the deposition of Ag nanoparticles on ITO and influences of the experimental parameters on the physical and optical properties, and electronic structure of the deposited Ag nanoparticles on ITO.

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Growth of Si-based core–shell nanowires through gases decomposition reactions with tunable morphologies, compositions, and electrochemical properties

Ramly

Hamzan

Nazarudin

et al. 2018

J Mater Sci: Mater Electron

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Influences of hydrogen dilution on the growth of Si-based core–shell nanowires by HWCVD, and their structure and optical properties

Cited by 6 publications

References 40 publications

Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition

Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition

Deposition of Silver Nanoparticles on Indium Tin Oxide Substrates by Plasma-Assisted Hot-Filament Evaporation

Growth of Si-based core–shell nanowires through gases decomposition reactions with tunable morphologies, compositions, and electrochemical properties

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