Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition

Abstract

This work demonstrated a growth of well-aligned NiSi/SiC core-shell nanowires by a one-step process of hot-wire chemical vapor deposition on Ni-coated crystal silicon substrates at different thicknesses. The NiSi nanoparticles (60 to 207 nm) acted as nano-templates to initially inducing the growth of these core-shell nanowires. These core-shell nanowires were structured by single crystalline NiSi and amorphous SiC as the cores and shells of the nanowires, respectively. It is proposed that the precipitation of the NiSi/SiC are followed according to the nucleation limited silicide reaction and the surface-migration respectively for these core-shell nanowires. The electrical performance of the grown NiSi/SiC core-shell nanowires was characterized by the conducting AFM and it is found that the measured conductivities of the nanowires were higher than the reported works that might be enhanced by SiC shell layer on NiSi nanowires. The high conductivity of NiSi/SiC core-shell nanowires could potentially improve the electrical performance of the nanowires-based devices for harsh environment applications such as field effect transistors, field emitters, space sensors, and electrochemical devices.

Nickel Film Deposition with Varying RF Power for the Reduction of Contact Resistance in NiSi

“…where R sh is the sheet resistance, C is the correction factor, L T is the effective transfer length, r is the radius of the inner circle, which was fixed at 80 mm, and s is the gap space, which was split as 8,12,16,20,24,32,40, and 48 mm. R sh and L T can be determined via a linear fit of R T at the different gap space values.…”

“…Kwang et al studied the interfacial properties of NiSi films deposited by using atomic layer deposition [11]. Mahdi et al reported well-aligned NiSi/SiC core-shell nanowire growth by hot-wire chemical vapor deposition to enhance the electrical properties of NiSi [12]. Koichi et al introduced a cyclic deposition process using molecular beam epitaxy (MBE) to grow NiSi for low-resistance films [13].…”

Deposition of Silver Nanoparticles on Indium Tin Oxide Substrates by Plasma-Assisted Hot-Filament Evaporation

“…Other common technique, chemical vapor deposition (CVD) is a technique for deposition nanostructured thin film on substrates with very high temperature using precursor gases [22]. Insertion of hot-filament in to the CVD technique helps to deposit nanocrystalline of nanostructured thin film at lower substrate temperature as hot-filament chemical vapor deposition (HFCVD) technique [18,[23][24][25][26][27]. The HFCVD process employs the heated filament to decompose Deposition of Silver Nanoparticles on Indium Tin Oxide Substrates by Plasma-Assisted Hot… DOI: http://dx.doi.org /10.5772/intechopen.94456 the precursor species and deposit nanostructured film on the substrate.…”

Forming of Dynamic Microstructure of Flexible Polymer

“…In addition, a precision mold is also time-consuming to fabricate. The model molding technology has developed rapidly in recent years, and the common microstructure component model molding technologies at present include plastics micro-injection molding [8,9], micro-thermoforming [10,11,12], micro-casting [13,14,15], and micro/nano imprinting [16,17,18,19,20,21,22,23,24,25,26,27,28,29,30]. While the aforesaid technologies have their characteristics and merits, most of them require molds for micro-molding processing.…”