Influence of zone purification process on TlBr crystals for radiation detector fabrication

Enhanced Born charge and proximity to ferroelectricity in thallium halides

“…The advancement of the material growth and purification techniques in recent years has significantly increased the product to ϳ10 −3 cm 2 / V for electrons and ϳ10 −4 cm 2 / V for holes. [6][7][8][9][10] These results are comparable to those for CdZnTe ͑CZT͒, which is the current state-of-the-art room-temperature semiconductor radiation detector material. 1 It is worth noting that when one moves from III-V to II-VI and I-VII compound semiconductors, the carrier mobility tends to decrease significantly.…”

“…2 TlBr has been investigated for radiation detection for several decades. [3][4][5] Some very encouraging results have been obtained, [6][7][8][9][10][11][12] showing that TlBr is a promising material for room-temperature spectroscopic gamma-ray detection. TlBr has high atomic numbers ͑Tl: 81 and Br: 35͒ and high density ͑7.56 g / cm 3 ͒, which lead to efficient radiation absorption.…”

TlBr and TlBr I1− crystals for γ-ray detectors

“…Initially, TlBr was not practically interesting because of the poor mobility-lifetime product of charge carriers (mt) e $10 À 6 cm 2 /V [5]. TlBr has gained more attention recently, after several research groups including RMD managed to improve the (mt) of electrons through purification [6][7][8]. This allowed fabrication of larger devices with higher detection efficiency.…”

Temperature dependence in the long-term stability of the TlBr detector

“…PeaK channel 87 collection, the main gaussian shape desirable became worse with the temperature enhancement, due to incomplete holes collection [8]. The Gaussian asymmetry can be seen in Fig.…”