Temperature dependence in the long-term stability of the TlBr detector

Costa, F.E.; Hamada, M.M.

doi:10.1109/nssmic.2008.4775183

Cited by 1 publication

(1 citation statement)

References 15 publications

(12 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…X-ray diffraction patterns were obtained in a Siemens (D5005) diffractometer with CuK radiation (2 ranging from 20 ∘ to 60 ∘ ). The two sample slices from the middle crystal were prepared as a detector according to procedures described previously [7,17,18]. The crystal was sliced in wafers, cut transversally to direction (110), using a diamond saw, and lubricated with glycerine during the process.…”

Section: Methodsmentioning

confidence: 99%

Influence of Impurities on the Radiation Response of the TlBr Semiconductor Crystal

Santos¹,

Mesquita²,

Silva³

et al. 2017

Advances in Materials Science and Engineering

Self Cite

View full text Add to dashboard Cite

Two commercially available TlBr salts were used as the raw material for crystal growths to be used as radiation detectors. Previously, TlBr salts were purified once, twice, and three times by the repeated Bridgman method. The purification efficiency was evaluated by inductively coupled plasma mass spectroscopy (ICP-MS), after each purification process. A compartmental model was proposed to fit the impurity concentration as a function of the repetition number of the Bridgman growths, as well as determine the segregation coefficients of impurities in the crystals. The crystalline structure, the stoichiometry, and the surface morphology of the crystals were evaluated, systematically, for the crystals grown with different purification numbers. To evaluate the crystal as a radiation semiconductor detector, measurements of its resistivity and gamma-ray spectroscopy were carried out, using 241Am and 133Ba sources. A significant improvement of the radiation response was observed in function of the crystal purity.

show abstract

Section: Methodsmentioning

confidence: 99%