Influence of velocity spatiotemporal correlations on the anomalous scaling exponents of passive scalars

Zhang, Xiaoqiang; Wang, Guangrui; Chen, Shigang

doi:10.1088/1674-1056/18/12/004

Cited by 2 publications

(1 citation statement)

References 17 publications

(7 reference statements)

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“…The mechanism of the formation of the 2DEG has been discussed previously in several references [27][28][29]. We present an explanation of the AlGaN-GaN interface and derive the expression for the 2DEG charge in the context of strain and temperature effects.…”

Section: Strain-and Temperature-dependence Of the 2deg Sheet Conducti...mentioning

confidence: 87%

Strain- and temperature-induced effects in AlGaN/GaN high electron mobility transistors

Yalamarthy

Senesky

2016

Semicond. Sci. Technol.

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This paper presents a physics-based model for computing the combined effect of applied strain and temperature on the device characteristics of aluminium gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs). More specifically, the electrical response of the HEMT is predicted under applied biaxial strain from ±1% over a wide range of temperatures (300-500 K). In addition, the interface state densities at the Schottky-AlGaN interface are introduced in the model. This physics-based model calculates the charge due to applied, thermal and lattice mismatch strain and temperature effects at the two-dimensional electron gas (2DEG) interface of the HEMT. Coupled with a model for the 2DEG mobility that includes strain and temperature effects, current-voltage characteristics for the HEMT are derived above the threshold voltage. Regimes with large strain sensitivity and temperature compensation are identified and vice-versa. The analysis from the model clarifies the large range of strain response variations observed in the experimentally measured characteristics of HEMTs in literature. Furthermore, the developed model is a useful tool for predicting the response of HEMTs used in sensing and under the influence of packaging in extreme environments, especially when temperature fluctuation and strain coupling is of concern.

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Section: Strain-and Temperature-dependence Of the 2deg Sheet Conducti...mentioning

confidence: 87%

Strain- and temperature-induced effects in AlGaN/GaN high electron mobility transistors

Yalamarthy

Senesky

2016

Semicond. Sci. Technol.

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Synthetic Turbulence Constructed by Self-Learning Fractal Interpolation

Wang

Zhang

Shi

et al. 2012

Chinese Phys. Lett.

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A self-learning fractal interpolation algorithm to construct synthetic fields with statistical properties close to real turbulence is proposed. Different from our previous work [Phys. Rev. E 84 (2011) 026328, 82 (2010) 036311], the position mapping and stretching factors between the adjacent large and small scales are learned from the initial information. Using this method, a turbulence-like field with K41 spectra and without dissipation is constructed well through a coarse grid velocity signal from one experiment's data. After filtering the interpolated signal appropriately, the probability distribution of velocity, velocity structure functions and the anomalous scaling law of the synthetic field are close to those of the original signal.

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Influence of velocity spatiotemporal correlations on the anomalous scaling exponents of passive scalars

Abstract: Influence of velocity spatiotemporal correlations on the anomalous scaling exponents of passive scalars *Zhang Xiao-Qiang(张晓强) a)b) † , Wang Guang-Rui(王光瑞) b) , and Chen Shi-Gang(陈式刚) b)

Cited by 2 publications

References 17 publications

Strain- and temperature-induced effects in AlGaN/GaN high electron mobility transistors

Strain- and temperature-induced effects in AlGaN/GaN high electron mobility transistors

Synthetic Turbulence Constructed by Self-Learning Fractal Interpolation

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