Influence of various complexing agents on structural, morphological, optical and electrical properties of electrochemically deposited ZnSe thin films

Aerosol-assisted chemical vapor deposition of MSe and MSSe thin films using zinc(ii) and cadmium(ii) single source precursors containing hybrid Se,X-PNC ligands

“…The estimated E g values were close to those of the corresponding bulk band edge of WZ-MSe (1.74 eV M = Cd and 2.7 eV M = Zn) 51,83 and comparable to those of analogous previously reported films (Table S2 and references therein, ESI†). 6,22,45,84–89 As expected, E g values of ternary thin films, 3F and 5F , were slightly higher than those of bulk MSe band gaps due to partial substitution of Se 2− with S 2− anions in the lattice. Additionally, sub-bandgap absorptions were observed in cadmium thin films.…”

“…They could have been overcome by a high strain lattice due to the Zn-rich content as confirmed by EDX results. 84 The signals appearing around 515 and 665 cm −1 were assigned to second-order scattering processes involving the ZnSe- and ZnS-like (2LO) phonons, respectively. Unfortunately, the signal corresponding to LO ZnSe + LO ZnS in between these values was not clearly observed due to the fluorescence background interference.…”

“…No Raman spectra of Zn-containing films at 375 1C could be resolved. However, the Raman peak at 255 (4F) cm À1 could be assigned to the longitudinal optical (LO) phonon modes of crystalline ZnSe (252 cm À1 (LO) and 205 cm À1 (TO)), 84,93 as well as higher order overtones. The spectra of 6F and 6Fb, CdSe films obtained from oxygencontaining SSPs, exhibited a single longitudinal-optical (LO) phonon mode at 201 cm À1 (6F) and 205 cm À1 (6Fb), respectively (Fig.…”