Influence of various activation temperatures on the optical degradation of Mg doped InGaN/GaN MQW blue LEDs

Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

“…Since InGaN/GaN multiple quantum wells (MQWs) are usually grown at a temperature much lower than that of AlGaN/GaN HEMTs (around 300 C lower), there is a risk of degradation of the MQWs underneath during the HEMT growth, resulting in reduced PL intensity and widened full width at half maximum (FWHM) of the PL peak. 10 However, a conflicting choice of low growth temperature for the HEMTs might degrade the crystalline quality of the HEMT buffer layer and result in low mobility of the transistor. In this work, the growth temperature of the HEMTs was carefully optimized to be 1045 C (100 C lower than conventional growth in our system) to balance the considerations mentioned above.…”

Synthesis, thermal stability, and photocatalytic activity of nanocrystalline gallium nitride via the reaction of Ga2O3 and NH4Cl at low temperature

“…Following the first generation of Ge, Si semiconductor materials, the second-generation GaAs, InP compound semiconductor materials, GaN with SiC, diamond and other wide bandgap compound semiconductor materials have been known as the third generation of semiconductor materials [1,2]. GaN, an important III-V semiconductor with a direct band gap of 3.39 eV at room temperature [3][4][5] and high optical transition probability, has a wide use in optoelectronic devices operating at blue-green light-emitting diode (LED) and laser diode (LD) and other material of choice [6][7][8].…”

No mask epitaxial lateral overgrowth of gallium nitride on sapphire

“…Currently, great attentions have been paid to GaN because of the demonstration of applications such as light emitting diodes, laser diodes and photodetectors in the spectrum region ranging from ultra violet to green color [1,2]. But the lack of a latticematching substrate was a challenge for the growth of GaN.…”