Influence of variable temperature on performance of mixed-MWCNT, MWCNT and SWCNT nanostructures as interconnects for high-performance VLSI-IC design

Jindal, Pardeep Kumar; Sandha, Karmjit Singh

doi:10.1007/s10854-019-02699-7

Cited by 10 publications

(2 citation statements)

References 39 publications

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“…MWCNTs and Mixed Carbon Nanotube bundles (MCBs) can increase the performance and reliability of interconnects in deep sub-micron (DSM) region for VLSI-Ic devices. These MWCNTs and MCBs provide better performance for a wide range of temperature ranges between 200 to 450 K at the technology node size varies from 32 nm to 14 nm [40,41]. Although CNT interconnects provide better performance in theoretical and simulation research, fabrication of CNT electrical interconnects for practical applications remains challenging.…”

Section: Discussionmentioning

confidence: 99%

“…These MWCNTs and MCBs provide better performance for a wide range of temperature ranges between 200 to 450 K at the technology node size varies from 32 nm to 14 nm. 40,41 Although CNT interconnects provide better performance in theoretical and simulation research, fabrication of CNT electrical interconnects for practical applications remains challenging. More technological development and research are still required.…”

Section: Discussionmentioning

confidence: 99%

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Power Withstanding Capability and Transient Temperature of Carbon Nanotube-Based Nano Electrical Interconnects

Robert¹

2021

ECS J. Solid State Sci. Technol.

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This paper exhibits the electrothermal modelling and evaluation of Carbon Nanotube (CNT) based electrical interconnects for electronic devices. The continuum model of the CNT is considered and the temperature across interconnect is predicted for the given power. Finite element modelling software COMSOL Multiphysics is used to carry out the simulations. The results are compared with Al and Cu interconnects. An electrothermal analysis is also carried out to obtain the temperature for the given power for Single-Walled CNT, Double-Walled CNT, Triple-Walled CNT, and Multi-Walled CNT. Results show that the CNT interconnects performs better when compared to Al and Cu interconnects. The power withstanding capability of CNT is 68.75 times more than Al and 32.35 times more than Cu. Based on the transient analysis, the time taken by the CNT interconnects to reach a steady temperature is obtained as 0.007 ns. On the application of power, Cu and Al interconnects takes 0.1 ns to reach the steady-state temperature. The nanostructured CNT based electrical interconnects would play a considerable role in replacing Cu and Al electrical interconnect applications for micro and nanoelectronic devices.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%