Influence of trapping on the exciton dynamics of AlxGa1−xAs films

Amo, A.; Martin, M. D.; Kłopotowski, Ł.; Viña, L.; Toropov, A. I.; Журавлев, К. С.

doi:10.1063/1.1885173

Cited by 6 publications

(6 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For n < 3x10 15 cm -3 and T L up to 30 K, the monotonic increase of t r with density is related to the trapping of free excitons in bound states. 17 For higher excitation densities, the steady decrease of t r with increasing density arises from the fast relaxation of excitons induced by exciton-exciton scattering. 7 The second group, T L > 49 K (open symbols), corresponds to the metallic phase, with the onset of the PL dominated by the fast component (electron-hole pair recombination).…”

Section: Resultsmentioning

confidence: 99%

“…38 At a lattice temperature of 5 K the spectrum displays the characteristic excitonic emission (1.512-1.516 eV range) and electron-acceptor recombination structures at lower energies, which have been discussed in detail in Ref. 17. For temperatures up to a critical temperature, T c = 49 K, the spectra are dominated by the excitonic emission.…”

Section: Methodsmentioning

confidence: 91%

“…9 Thus, the literature provides a wide spectrum of experimental data with rise times increasing 10 or decreasing 7,8,[11][12][13] when raising the excitation density. On the other hand, in bulk III-V samples, these time-resolved studies are scarce [14][15][16][17] and ascertain that the free-exciton PL rise time is strongly influenced by trapping in localization centers.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Interplay of exciton and electron-hole plasma recombination on the photoluminescence dynamics in bulk GaAs

et al. 2006

Self Cite

View full text Add to dashboard Cite

We present a systematic study of the exciton/electron-hole plasma photoluminescence dynamics in bulk GaAs for various lattice temperatures and excitation densities. The competition between the exciton and electron-hole pair recombination dominates the onset of the luminescence. We show that the metal-to-insulator transition, induced by temperature and/or excitation density, can be directly monitored by the carrier dynamics and the time-resolved spectral characteristics of the light emission. The dependence on carrier density of the photoluminescence rise time is strongly modified around a lattice temperature of 49 K, corresponding to the exciton binding energy (4.2 meV). In a similar way, the rise-time dependence on lattice temperature undergoes a relatively abrupt change at an excitation density of 120-180x10 15 cm -3 , which is about five times greater than the calculated Mott density in GaAs taking into account many body corrections.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Interplay of exciton and electron-hole plasma recombination on the photoluminescence dynamics in bulk GaAs

et al. 2006

Self Cite

View full text Add to dashboard Cite

show abstract

“…10 In addition, this carrier migration between localized states may account for the long rise times in the x ¼ 0.40 TRPL spectra, depicted by the initial divergence from the fitted behavior. 36,37 Furthermore, the relaxation of cool excitons may also have to contend with localized states brought about by compositional disorder, which can conceivably account for the two-fold increase in s 2 for x ¼ 0.40 with respect to that for x ¼ 0.13. This assertion is based on the fact that localization is analogous to impurity-related binding of excitons and the radiative lifetime of bound excitons increases with binding energy.…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence lineshape and dynamics of localized excitonic transitions in InAsP epitaxial layers

Merritt

Meeker

Magill

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

The excitonic radiative transitions of InAsxP1−x (x = 0.13 and x = 0.40) alloy epitaxial layers were studied through magnetic field and temperature dependent photoluminescence and time-resolved photoluminescence spectroscopy. While the linewidth and lineshape of the exciton transition for x = 0.40 indicate the presence of alloy broadening due to random anion distribution and the existence of localized exciton states, those of x = 0.13 suggest that this type of compositional disorder is absent in x = 0.13. This localization is further supported by the behavior of the exciton transitions at low temperature and high magnetic fields. InAs0.4P0.6 exhibits anomalous “S-shaped” temperature dependence of the excition emission peak below 100 K as well as linewidth broadening at high magnetic fields due to the compression of the excitonic volume amid compositional fluctuations. Finally, photoluminescence decay patterns suggest that the excitons radiatively relax through two channels, a fast and a slow decay. While the lifetime of the fast decay is comparable for both compositions (∼30 ps), that of the slow decay increases from 206 ps to 427 ps as x increases from 0.13 to 0.40, attributable to carrier migration between the localization states of InAs0.4P0.6.

show abstract

“…7−9 Therefore, the exciton can be observed even at room temperature, which is unusual compared with 3D semiconducting materials, such as GaAs. 10,11 Additionally, the monolayer TMDC shows a direct band gap at K and K' points in the Brillouin zone, which can be expected for applying optical transistors, 12,13 light-emitting diodes, 6,14,15 photovoltaics, 16−18 and valley-dependent optoelectronics. 19−22 One drawback of the optical behavior in the monolayer TMDCs is the low optoelectronic quality.…”

Section: ■ Introductionmentioning

confidence: 96%

Ultralarge Photoluminescence Enhancement of Monolayer Molybdenum Disulfide by Spontaneous Superacid Nanolayer Formation

Yamada

Zhang

Ikeno

et al. 2021

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Due to the direct band gap nature, extensive studies have been conducted to improve the optical behavior in monolayer transition metal dichalcogenides (TMDCs) with a formula of MX 2 (M = Mo, W; X = S, Se, Te). One of the strongest modulating agents of optical behavior is a molecular superacid treatment; however, the chemical event has not been unveiled. Also, the engineering protocol for keeping the treatment is immature. In this work, we systematically study the superacid treatment procedures on monolayer molybdenum disulfide (MoS 2 ) and propose that the interaction, a hydrophilic interaction, between the superacid molecule and MoS 2 surface would be critical. As a result of the interaction, the superacid molecules spontaneously form an acidic layer with the thickness of several nanometers on the surface. The power-dependent photoluminescence (PL) measurement indicates the edge of MoS 2 flake is more effective and electronically modulated by the treatment. By understanding the superacid nanolayer formation by the treatment, we succeeded in maintaining the ultrastrong PL in the superacid-treated MoS 2 for more than 30 days in the ambient air by encapsulation with transparent organic polymers. This study advances the understanding and designing applications of strong luminescent properties in the superacid-treated TMDCs and paves the way toward engineering exciton dynamics and an experimental platform for treating multibody states.

show abstract

Influence of trapping on the exciton dynamics of AlxGa1−xAs films

Cited by 6 publications

References 16 publications

Interplay of exciton and electron-hole plasma recombination on the photoluminescence dynamics in bulk GaAs

Interplay of exciton and electron-hole plasma recombination on the photoluminescence dynamics in bulk GaAs

Photoluminescence lineshape and dynamics of localized excitonic transitions in InAsP epitaxial layers

Ultralarge Photoluminescence Enhancement of Monolayer Molybdenum Disulfide by Spontaneous Superacid Nanolayer Formation

Contact Info

Product

Resources

About