“…The measurement with maximum value for the coherence is shown among the different biasing conditions that correspond to the data denoted with circles in Figure 31. [22,47,48,49,50,51,72,82,88,89,90,91,92,93,95,96,97,98,99,100,101,102,103,104,105,106,107,108,109,110,111,112,149,145,202,203,204,205,206] for nMOS transistors ( ), from [109,155,207] for Ge on insulator (GOI) and strained on SiGe layer and control nMOS transistors ( ), from [47,52,88,94,…”