Influence of thickness and annealing on photoluminescence of nanostructured ZnSe/ZnS multilayer thin films prepared by electron beam evaporation

Effect of Preparation Parameters on Deep-Blue Light-Emitting Diodes Based on Nanostructured ZnSe/ZnS Multilayer Films

“…Therefore, we can conclude that electroluminescence of devices depends on the photoluminescence of EML. As our previous reports, annealing temperature affects the properties of nanostructured ZnSe/ZnS multilayer thin films directly Figure describes the XRD and scanning electron microscopy (SEM) images of nanostructured ZnSe/ZnS multilayer thin films annealed at different temperatures ranging from 620 to 680 °C.…”

“…As our previous reports, annealing temperature affects the properties of nanostructured ZnSe/ZnS multilayer thin films directly. 24 Figure 6 describes the XRD and scanning electron microscopy (SEM) images of nanostructured ZnSe/ZnS multilayer thin films annealed at different temperatures ranging from 620 to 680 °C. It can be observed that as the annealing temperature increases, the intensity of the crystallization peak first increases and then decreases, reaching the highest value at 660 °C, as shown in Figure 6 a.…”

“…Second, nanostructured films and quantum dots have similar properties, such as high luminous efficiency, good stability, and adjustable emission spectra. Finally, in our previous research, nanostructured ZnSe/ZnS multilayer thin films with excellent blue photoluminescence (PL) have been prepared by electron beam evaporation, where ZnSe acts as a light-emitting layer and ZnS acts as a passivation layer, 24 which makes full use of the unique properties of ZnSe and ZnS in the heterojunction.…”

Cadmium-Free Nanostructured Multilayer Thin Films with Bright Blue Photoluminescence and Excellent Stability

“…The silicon substrate was cleaned with acetone, alcohol, and deionized water, successively. Since the conditions such as thickness and annealing temperature have been reported in detail in our previous work, 27 we chose the optimal preparation conditions. In simple terms, the vacuum degree of the cavity was kept at about 2.0 × 10 −3 Pa during the deposition process.…”

Nanolasers Incorporating CoxGa0.6–xZnSe0.4 Nanoparticle Arrays with Wavelength Tunability at Room Temperature

“…Meanwhile, the better semiconductor property can be expressed through incorporation of transition metal (TM) elements (i.e., Co, Ni, Zn, Cd). ZnS or ZnSe has been extensively used in a large number of infrared materials such as satellite communication, medical diagnosis, and sensing detection. − In addition, Co as a TM ion has attracted much attention ascribed to abundant photon transitions energy levels . What’s important, the proven ferromagnetic property at room temperature is considered to be a characteristic of the high applicability with respect to Co such as the magnetic separation technology .…”