Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

Abstract

It is important to research the dependence of the capacitance and capacitance on the parameters on the photodiodes. In this article, we aim research experimental and theoretical on the nCdSpSi heterostructure. A heavily doped n+CdS layer with a thickness of about 50 Å was created by deposition of a thin layer of indium (In) for 25-30 s on the surface of a CdS film in vacuum with a residual pressure of 10-5Torr at a substrate temperature of 373 K, followed by annealing at 673 K in within 300s. Then, on the surface of this heavily doped n+CdS layer, a current-collecting “P”-shaped ohmic contact with an area of 3 mm2 was obtained also by the vacuum evaporation of In.

Properties of Single Crystal Silicon Doped with Vanadium

“…The concentration of the optically active oxygen atom is No opt ≈9•10 17 cm -3 and the carbon concentration N c opt ≈7.3•10 17 cm -3 , according to IR-absorption spectra at 1100 cm -1 (oxygen band area) and 610 cm -1 (carbon band area). Infrared absorption spectrum at 300 K according to a two-beam scheme, infrared spectra FSM-2201 operating in the range 370÷7800 cm -1 a spectrometer was used to determine the optically active oxygen (N 0 opt ) carbon (N c opt ) at room temperature [7][8][9][10][11]. IR-absorption spectra were measured for oxygen at 1106 cm -1 (9.1 μm) (Fig.…”

Processes of Defect Formation in Silicon Diffusionally Doped With Platinum and Irradiated With Protons

“…The microstructure and isovalent impurities determine the functional properties of materials of this class. That is why the study of the electrical properties of semiconductors and semiconductor structures, taking into account their real microstructure, is an important and urgent task [1][2][3][4]. New materials based on silicon, in particular, those containing platinum (n-Si<Pt>) as a dopant (n-type conductivity), have not been studied enough and are of interest for fundamental science and practical applications.…”