Influence of the interfacial layer on the properties of the Au/ZnSe Schottky barrier

Abstract

The properties of the Au/ZnSe Schottky barrier have been investigated by J/U, C/ U and photoelectric measurements with considerate attention given to the influence of the interface. The behaviour of the capacitance of the diodes, investigated as a function of the frequency and the temperature, has been explained by assuming the presence of one set of surface states uniformly distributed within the forbidden energy gap. By the investigation of their frequency response a method for the valuation of the relaxation time is illustrate. The photoelectric determination of the image force dielectric constant is in agreement with the presence of a ZnO layer at the interface. Finally, an electroluminescent emission has been observed at low forward voltages with two characteristic peaks at 1.89 eV and 2.67 eV. They should be related to light emission by self-activation and donor acceptor recombination respectively

Ballistic electron emission microscopy of Au/n-ZnSe contacts and local density of states spectroscopy

“…2͒ could be compared to the 1.65 eV value previously reported by Tarricone et al 12 This result coincides with one of the characteristic Fermi level pinning positions for the Au/n-ZnSe contact. 13 The dispersion of threshold values can be related to the stoichiometry of ZnSe at the interface.…”

Study of Au, Ni-(n)ZnSe Thin Film Schottky Barrier Junctions

“…This is in good agreement with the values reported earlier [19]. However, higher barrier heights of 1.65 eV and 1.2 eV for single crystal ZnSe with Au and Ni, respectively, have been reported by other workers [20,21]. From the table it is seen that there are no significant changes of barrier height with doping concentrations, and the heat treatment applications result in slight increases of the barrier heights.…”