Influence of the film thickness on structural and optical properties of CdTe thin films electrodeposited on stainless steel substrates

Pantoja, Joel; Mathews, Nini Rose; Hernández, Germán Pérez; Mathew, Xavier

doi:10.1016/j.matchemphys.2013.07.043

Cited by 30 publications

(5 citation statements)

References 34 publications

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“…The increase in non-zero extinction coefficient with Cu dopant further confirms the existence of the broad urbach tail. This observation is consistent with the result of Pantoja Enriquez et al, 29 where they have observed the non-zero dispersion in extinction coefficient below the band gap for the electrodeposited CdTe thin films on stainless steel substrates and it increased with the thickness of films. Besides, the increase in value of extinction coefficient with Cu content may be due to the surface roughness of the films, which in turn enhances the scattering loss thereby reducing the transmitting ability.…”

Section: Refractive Index and Extinction Coefficientsupporting

confidence: 92%

Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

Punitha

Sivakumar

Sanjeeviraja

et al. 2014

Journal of Applied Physics

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In this paper, we report on physical properties of pure and Cu doped cadmium telluride (CdTe) films deposited onto corning 7059 microscopic glass substrates by electron beam evaporation technique. X-ray diffraction study showed that all the deposited films belong to amorphous nature. The average transmittance of the films is varied between 77% and 90%. The optical energy band gap of pure CdTe film is 1.57 eV and it decreased to 1.47 eV upon 4 wt. % of Cu addition, which may be due to the extension of localized states in the band structure. The refractive index of the films was calculated using Swanepoel method. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (Ed) parameters, dielectric constants, plasma frequency, and oscillator energy (Eo) of CdTe and CdTe:Cu films were calculated and discussed in detail with the light of possible mechanisms underlying the phenomena. The variation in intensity of photoluminescence band edge emission peak observed at 820 nm with Cu dopant is due to the change in surface state density. The observed trigonal lattice of Te peaks in the micro-Raman spectra confirms the p-type conductive nature of films, which was further corroborated by the Hall effect measurement. The lowest resistivity of 6.61 × 104 Ω cm was obtained for the CdTe:Cu (3 wt. %) film.

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Section: Refractive Index and Extinction Coefficientsupporting

confidence: 92%

Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

Punitha

Sivakumar

Sanjeeviraja

et al. 2014

Journal of Applied Physics

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“…In order to increase the precision of the lattice parameters values, the graphic method of consecutive approximations was used. The pole density value was calculated from the following equation:

P_{i} = \frac{((), I_{i} / I_{0 normali})}{\frac{1}{N} \sum_{i = 1}^{N} ((), I_{i} / I_{0 normali})},

where I i and I 0i are the intensities of the i th diffraction peak of deposited film and etalon from the reference data, respectively, and N is the number of lines on the radiograph. The orientation factor of the films was determined by the following equation:

normalf = \sqrt{\frac{1}{N} \sum_{normali = 1}^{N} {({normalP}_{normali} - 1)}^{2}},

The Raman spectroscopy mapping analysis (RS‐mapping) was performed at a room temperature with the Renishaw InVia90V727 Raman microscope in backscattering geometry with excitation by a near‐infrared laser ( λ = 785 nm).…”

Section: Experimental Partsupporting

confidence: 80%

Effect of deposition temperature on the growth mechanism of chemically prepared CZTGeS thin films

Shamardin

Kurbatov

Medvids

2019

Surface & Interface Analysis

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The Cu2ZnSnGeS4 (CZTGeS) thin films were deposited by the spray pyrolysis method at different substrate temperatures without further sulfurization. The influence of various deposition temperatures on the surface morphology, microstructure, optical properties, chemical, and phase composition were investigated. The substitution mechanism of Sn/Ge in the crystal lattice of CZTGeS depending on deposition temperatures was studied. It was shown that a variation in substrate temperature has a strong effect on the surface morphology of the films. The X‐ray diffractometer (XRD), transmission electron microscope (TEM), and Raman spectroscopy (RS) analysis showed that CZTGeS films were polycrystalline with a kesterite‐type single‐phase structure and a preferential orientation of (112). The RS‐mapping analysis showed the distribution of intensities on the surfaces of the films. Optical measurements showed that CZTGeS films are highly absorbing in the visible region, and the optical band gap is shifted from 1.89 to 1.84 eV.

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“…The nonlinear optical parameters of thin films, such as third-order nonlinear susceptibility χ (3) and nonlinear refractive index n 2 , are crucial for the fabrication of several electronic and photonic devices [53,54]. The n 2 and χ (3) parameters are calculated by combining Miller's generalized rule and the parameters from the WDD single oscillator model [55][56][57] by utilizing the following formulas [58][59][60][61][62],…”

Section: Nonlinear Optical Propertiesmentioning

confidence: 99%

Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

et al. 2020

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Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.

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Influence of the film thickness on structural and optical properties of CdTe thin films electrodeposited on stainless steel substrates

Cited by 30 publications

References 34 publications

Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

Physical properties of electron beam evaporated CdTe and CdTe:Cu thin films

Effect of deposition temperature on the growth mechanism of chemically prepared CZTGeS thin films

Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

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