Influence of the doping type and level on the morphology of porous Si formed by galvanic etching

Pyatilova, O. V.; Гаврилов, С. А.; Shilyaeva, Yu. I.; Павлов, А. А.; Shaman, Yu. P.; Дудин, А. А.

doi:10.1134/s1063782617020178

Cited by 6 publications

(4 citation statements)

References 24 publications

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“…Tang D. and co-authors showed that porosity of cathode diffusion layer has a significant effect on the oxygen mass transfer and removal of liquid water in direct ethanol fuel cell [15]. The porosity and specific surface area of porous silicon depend on a few parameters: the type of conductivity and resistivity of the silicon wafer [16,17], the composition and temperature of the electrolyte for etching [18,19], the illumination of the reaction zone [20,21] and metal composition deposed on Si [22]. The influence of these parameters is intensively studied.…”

Section: Introductionmentioning

confidence: 99%

Tailoring porous/filament silicon using the two-step Au-assisted chemical etching of p-type silicon for forming an ethanol electro-oxidation layer

Volovlikova¹,

Shilyaeva²,

Silakov³

et al. 2022

Nanotechnology

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In this paper, we are reporting on the fabrication of a porous silicon/Au and silicon filament/Au using the two-step Au-assisted chemical etching of p-type Si with a specific resistivity of 0.01, 1, and 12 Ω·cm when varying the Au deposition times. The structure analysis results show that with an increasing Au deposition time of up to 7 min, the thickness of the porous Si layer increases for the same etching duration (60 min), and the morphology of the layer changes from porous to filamentary. This paper shows that the uniform macro-porous layers with a thickness of 125.5–171.2 μm and a specific surface area of the mesopore sidewalls of 142.5–182 m2·g−1 are formed on the Si with a specific resistivity of 0.01 Ω·cm. The gradient macro-porous layers with a thickness of 220–260 μm and 210–290 μm, the specific surface area of the mesopore sidewalls of 3.7–21.7 m2·g−1 and 17–29 m2·g−1 are formed on the silicon with a specific resistivity of 1 and 12 Ω·cm, respectively. The por-Si/Au has excellent low-temperature electro oxidation performance with ethanol, the activity of ethanol oxidation is mainly due to the synergistic effect of the Au nanoparticles and porous Si. The formation mechanism of the uniform and gradient macro-porous layers and ethanol electro-oxidation on the porous/filament silicon, decorated with Au nanoparticles, was established. The por-Si/Au structures with perpendicularly oriented pores, a high por-Si layer thickness, and a low mono-Si layer thickness (with a specific resistivity of 1 Ω·cm) are optimal for an effective ethanol electro-oxidation, which has been confirmed with chronoamperometry measurements.

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Section: Introductionmentioning

confidence: 99%

Tailoring porous/filament silicon using the two-step Au-assisted chemical etching of p-type silicon for forming an ethanol electro-oxidation layer

Volovlikova¹,

Shilyaeva²,

Silakov³

et al. 2022

Nanotechnology

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“…Porous silicon (por-Si) has been receiving a great deal of attention due to its interesting physical and optical [1] properties and promising potential technological applications in the fields of sensing [2,3], Li-ion batteries [4], and solar cells [5]. The morphology of the silicon wafer may be modified by electrochemical wet etching [6][7][8], galvanic etching [9][10][11], or metal-assisted chemical etching (MACE) [12,13] to produce pores, nanowires, and microstructures. These methods have already been studied in detail.…”

Section: Introductionmentioning

confidence: 99%

“…The physical properties of porous silicon are determined by two large groups of factors that affect carrier density on the surface. The first group of factors includes doping type and charge carrier concentration [10,14]. The second group includes illumination during etching [15,16].…”

Section: Introductionmentioning

confidence: 99%

Influence of Illumination on Porous Silicon Formed by Photo-Assisted Etching of p-Type Si with a Different Doping Level

2020

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The influence of illumination intensity and p-type silicon doping level on the dissolution rate of Si and total current by photo-assisted etching was studied. The impact of etching duration, illumination intensity, and wafer doping level on the etching process was investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM), and Ultraviolet-Visible Spectroscopy (UV-Vis-NIR). The silicon dissolution rate was found to be directly proportional to the illumination intensity and inversely proportional to the wafer resistivity. High light intensity during etching treatment led to increased total current on the Si surface. It was shown that porous silicon of different thicknesses, pore diameters, and porosities can be effectively fabricated by photo-assisted etching on a Si surface without external bias or metals.

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“…Anodization of silicon in hydrofluoric acid solution is considered the best technique to form homogeneous porous structures reproducibly, although other methods have also been reported, such as stain etching [15], galvanic etching [16], metal-assisted chemical etching [17,18], and contactless electrochemical etching [19]. In the anodization process, semiconductor silicon with defect electrons (e − ) or holes (h + ) is dissolved to form pores orthogonal to the Si surface ( Figure 1) [20].…”

Section: Fabrication Of Porous Siliconmentioning

confidence: 99%

Optical Biosensing and Bioimaging With Porous Silicon and Silicon Quantum Dots (Invited Review)

Guan¹

2017

PIER

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Influence of the doping type and level on the morphology of porous Si formed by galvanic etching

Cited by 6 publications

References 24 publications

Tailoring porous/filament silicon using the two-step Au-assisted chemical etching of p-type silicon for forming an ethanol electro-oxidation layer

Tailoring porous/filament silicon using the two-step Au-assisted chemical etching of p-type silicon for forming an ethanol electro-oxidation layer

Influence of Illumination on Porous Silicon Formed by Photo-Assisted Etching of p-Type Si with a Different Doping Level

Optical Biosensing and Bioimaging With Porous Silicon and Silicon Quantum Dots (Invited Review)

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