Influence of the doping and annealing atmosphere on zinc oxide thin films deposited by spray pyrolysis

Nunes, Patrı́cia; Malik, A.; Fortunato, Elvira; Vilarinho, Paula M.; Martins, Rodrigo

doi:10.1016/s0042-207x(98)00321-2

Cited by 79 publications

(32 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It has therefore been suggested that thermal treatments lead to desorption of oxygen acceptor states at the surface or at grain boundaries, which act as electron traps to lower charge mobility. 19 Finally annealing in hydrogen or partial vacuum may facilitate hydrogen doping, where hydrogen acts exclusively as a shallow donor. 13 Indeed one or all of these defect species may contribute to the enhanced conductivity of ZnO post anneal.…”

Section: Introductionmentioning

confidence: 99%

Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

et al. 2016

View full text Add to dashboard Cite

© 2016 The Royal Society of Chemistry.The measured structural, optical and electrical properties of Al, Ga and In doped ZnO films deposited using spray pyrolysis are reported over the doping range 0.1-3 at%. Over the entire doping series highly transparent, polycrystalline thin films are prepared. Using AC Hall as a measurement technique we probe the electronic properties of our doped films, deconvoluting the impact of doping on the measured charge carrier concentrations and Hall mobility. We focus on the low doping range i.e. 0.1-1 at%, where we observe unexpected variations in charge carrier concentration and mobility and propose a mechanism to explain our observations. In this doping range highly resistive films are formed hence we highlight AC Hall as a reliable and highly reproducible technique for analysing electrical properties and subsequently elucidate the doping mechanisms. The implementation of a simple, post-deposition heat treatment demonstrated on our AZO results in typical films with charge carrier concentrations exceeding >1019 cm-3, and electron mobilities >10 cm2 V-1 s-1 and stability exceeding 180 days. We describe in detail the nature of the defect chemistry and the role of intrinsic defects and show, that despite significant variations in dopant species and grain boundary concentrations, that the defect chemistry dominates the electrical characteristics

show abstract

Section: Introductionmentioning

confidence: 99%

Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

et al. 2016

View full text Add to dashboard Cite

show abstract

“…The electrical resistivity of ZnO thin film is readily modified by the addition of impurity or the post-deposition annealing [1][2][3]. Aluminum oxide doped Zinc oxide (AZO) thin films have been prepared by thermal evaporation [4,5], chemical vapour deposition (CVD) [6], plasma enhanced chemical vapour deposition (PECVD) [7], sol-gel [8,9], spray pyrolysis [10][11][12], pulsed laser deposition (PLD) [13], magnetron sputtering [14][15][16][17][18][19] methods, etc. Magnetron reactive sputtering, using a Zn-Al alloy target, has advantages in target fabrication and film deposition rate [18].…”

Section: Introductionmentioning

confidence: 99%

“…A comprehensive review of our results of the fabrication, post-deposition annealing at different conditions and their effects on the optical and electronic properties will be given in this paper. There has been research concerning the influence of substrate temperature, sputtering power, sputtering pressure (argon pressure), target to substrate distance, and post-deposition annealing in air, argon, or reducing gas on AZO film quality [11,12,18,19]. The structure and physical properties of aluminum-doped zinc oxide transparent thin films synthesized by the thermal evaporation method, sol-gel technique, spray pyrolysis method, RF sputtering method, and subsequently annealed in vacuum, respectively, have been studied [4,9,10,20].…”

Section: Introductionmentioning

confidence: 99%

Effect of Vacuum Annealing on the Properties of Transparent Conductive AZO Thin Films Prepared by DC Magnetron Sputtering

Fang

Yao

2002

phys. stat. sol. (a)

View full text Add to dashboard Cite

“…This improvement can be associated with a higher carrier injection through the Al-ZnO (metal-semiconductor) interface. Nunes et al [6,18,19] reported that this is due to desorption of oxygen present at the grain boundaries. As result of this oxygen loss, there is an increase in the effective carrier concentration near to the Al-ZnO interface.…”

Section: Thermal Annealing Effectsmentioning

confidence: 99%

Semiconductor Materials by Ultrasonic Spray Pyrolysis and Their Application in Electronic Devices

Dominguez¹,

Luna-López²,

Flores³

2017

Pyrolysis

View full text Add to dashboard Cite

Ultrasonic spray pyrolysis is a deposition technique that enables a fine mist of the precursor solution in order to deposit higher-density thin films. This characteristic makes of great potential the use of ultrasonically spray-deposited semiconductors films for lowcost, transparent, flexible and large-area applications. In this chapter, low-temperature deposition and characterization of ultrasonically spray-deposited zinc oxide (ZnO) films are presented. The ZnO films deposited by ultrasonic spray pyrolysis at 200°C were characterized by optical transmittance, photoluminescence spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy. The study of low-temperature annealing of ZnO films is also presented. Moreover, the characterization of aluminum-doped ZnO films deposited by ultrasonic spray pyrolysis at 200°C is presented. Finally, applications of these ultrasonic spray-deposited films in electronic devices are presented.

show abstract

Influence of the doping and annealing atmosphere on zinc oxide thin films deposited by spray pyrolysis

Cited by 79 publications

References 9 publications

Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

Effect of Vacuum Annealing on the Properties of Transparent Conductive AZO Thin Films Prepared by DC Magnetron Sputtering

Semiconductor Materials by Ultrasonic Spray Pyrolysis and Their Application in Electronic Devices

Contact Info

Product

Resources

About