Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

Abstract

In this letter, we explore the influence of the CuxTe1-x layer composition (0.2 < x < 0.8) on the resistive switching of CuxTe1−x/Al2O3/Si cells. While x > 0.7 leads to large reset power, similar to pure-Cu electrodes, x < 0.3 results in volatile forming properties. The intermediate range 0.5 < x < 0.7 shows optimum memory properties, featuring improved control of filament programming using <5 μA as well as state stability at 85 °C. The composition-dependent programming control and filament stability are closely associated with the phases in the CuxTe1−x layer and are explained as related to the chemical affinity between Cu and Te.

Thermal-stability optimization of Al2O3/Cu–Te based conductive-bridging random access memory systems

“…However, the phase diagram of the Cu-Te system is very complex, showing phase transitions at moderate temperatures for all compositions [3]. We previously reported on the drastic influence of the Cu-Te composition on the switching properties of Si\Al 2 O 3 \Cu x Te 1 − x cells in the range 0.2 b x b 0.8 [4]. Optimum switching was observed for 0.5 b x b 0.7 [4], however the effect of temperature on the cell integrity in this range needs to be carefully investigated.…”

Memristive behavior of Al2O3 film with bottom electrode surface modified by Ag nanoparticles

“…The negative differential resistance phenomenon was observed in anodic Al 2 O 3 under vacuum condition, several decades ago [15]. Recently, the Al 2 O 3 film has been found to show reversible resistive switching characteristics [16][17][18][19][20]. Many switching mechanisms for Al 2 O 3 -based devices have been proposed, and most of studies suggest that the resistive switching behavior derives from the formation and rupture of conducting filaments [4,10,21,22].…”

Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film

“…Good data retention with high resistance ratios of 10 Resistive switching random access memory devices have shown promise for developing low power nanoscale nonvolatile memory technology in the future. [1][2][3][4][5] Many previous studies of this topic have reported solid electrolyte-based resistive switching memory devices that use different materials, such as GeSe x , [6][7][8] CuTe/Al 2 O 3 , 13 and GeSe x /TaO x. 14 Resistive switching occurs because of the formation/dissolution of the silver (Ag) or Cu metallic filament under external bias.…”