Influence of the boron emitter profile on V _OC and J _SC losses in fully ion implanted n-type PERT solar cells

Abstract

In this work, we report on fully ion implanted 156 Â 156 mm . Contrary to the dependence of V OC on the emitter profile, J SC is lower for deeper emitters. The loss in J SC is visible in the internal quantum efficiencies IQE at short wavelengths. Strategies for an optimization of both quantities, J SC and V OC , are discussed.

Bifacial, fully screen-printed n-PERT solar cells with BF2 and B implanted emitters

“…Regarding an explanation of this effect, we do not share the picture of Lanterne et al [6] that the high J 02 values for co-annealed cell are implied by contaminations from the Ag paste on the rear. The reason for our different point of view is that we frequently observe high J 02 values on co-annealed n-PERT cells with evaporated Al as rear-side metallization [5].…”

“…for interdigitated back contact solar cells [1][2][3] or on full-area, e.g. for passivated emitter, rear totally doped (PERT) cells [4][5][6][7][8]. Ion implantation requires a high temperature annealing step to cure implant-induced crystal defects.…”

Ion implantation of boric molecules for silicon solar cells

“…Subsequent defect annealing is performed in a conventional quartz furnace under inert ambient (dry N 2 ) at 1050°C for 80 min (textured samples with BF x and for B reference, plateau time), at 1050°C for 20 min (section 3.2) or at 800-1050°C for 30 min (Section 3.3). After ion implantation of elemental boron, annealing at 1050°C for several 10 min leads to excellent emitter saturation current densities which are not affected by implant-induced crystal defects anymore [17,18]. The lower temperatures are used to evaluate the potential of reducing the thermal budget after BF x , especially for BF 2 implantation.…”

Ion-Beam-Induced Defects in CMOS Technology: Methods of Study

“…Though modern MOS device technology may rely on ion-implantation free approaches [26,27], applications of ion implantation are expanding over areas of quantum information processing [28,29] and photovoltaics [30,31]. Plasma immersion ion implantation enables fabrication of 3D transistor architectures [32,33] required for scaling of metal-oxide-semiconductor field-effect transistors (MOSFETs) and is technologically more convenient for the fabrication of shallow pn-junctions.…”